IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS D V 75V DSS Uninterruptible Power Supply R typ. High Speed Power Switching 5.0m DS(on) Hard Switched and High Frequency Circuits max. G 6.3m I 120A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S S D D D Lead-Free G G G 2 D Pak TO-220AB TO-262 IRFS3307PbF IRFB3307PbF IRFSL3307PbF Absolute Maximum Ratings Symbol Parameter Max. Units 120 I T = 25C Continuous Drain Current, V 10V A D C GS 84 I T = 100C Continuous Drain Current, V 10V D C GS 510 I Pulsed Drain Current DM 200 P T = 25C Maximum Power Dissipation W D C 1.3 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS -55 to + 175 T Operating Junction and C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 270 mJ AS (Thermally limited) Avalanche Current A I See Fig. 14, 15, 16a, 16b AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.61 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R Junction-to-Ambient (PCB Mount) , D Pak 40 JA www.irf.com 1 01/20/12 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.069 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.0 6.3 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Input Resistance 1.5 f = 1MHz, open drain G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 98 S V = 50V, I = 75A DS D Q Total Gate Charge 120 180 nC I = 75A g D Q Gate-to-Source Charge 35 V = 60V gs DS Q Gate-to-Drain Mille) Charge 46 V = 10V gd GS t Turn-On Delay Time 26 ns V = 48V d(on) DD t Rise Time 120 I = 75A r D t Turn-Off Delay Time 51 R = 3.9 d(off) G t Fall Time 63 V = 10V f GS C Input Capacitance 5150 pF V = 0V iss GS C Output Capacitance 460 V = 50V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 570 V = 0V, V = 0V to 60V , See Fig.11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 700 V = 0V, V = 0V to 60V , See Fig. 5 oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 130 A MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current 510 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS dv/dt Peak Diode Recovery 11 V/ns T = 175C, I = 75A, V = 75V J S DS t Reverse Recovery Time 38 57 ns T = 25C V = 64V, rr J R 46 69 T = 125C I = 75A J F di/dt = 100A/s Q Reverse Recovery Charge 65 98 nC T = 25C rr J 86 130 T = 125C J I Reverse Recovery Current 2.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Package limitation current is 75A. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.096mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note AN-994. R = 25 , I = 75A, V =10V. Part not recommended for use G AS GS R is measured at T approximately 90C. above this value. J 2 R (end of life) for D Pak and TO-262 = 0.75C/W. Note: This is the I 75A, di/dt 530A/s, V V , T 175C. JC SD DD (BR)DSS J maximum measured value after 1000 temperature cycles from -55 to 150C Pulse width 400s duty cycle 2%. and is accounted for by the physical wearout of the die attach medium. 2 www.irf.com