IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D V 100V DSS High Speed Power Switching R typ. Hard Switched and High Frequency Circuits 8.0m DS(on) G max. 10m I 88A S D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S S S D D D Lead-Free G G G 2 D Pak TO-220AB TO-262 IRFS4410PbF IRFB4410PbF IRFSL4410PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 88 A D C GS I T = 100C Continuous Drain Current, V 10V 63 D C GS I 380 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V 20 V Gate-to-Source Voltage GS 19 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 220 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 16a, 16b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.61 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 05/02/07 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.094 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 8.0 10 m V = 10V, I = 58A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS R Gate Input Resistance 1.5 f = 1MHz, open drain G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 120 S V = 50V, I = 58A DS D Q Total Gate Charge 120 180 nC I = 58A g D Q Gate-to-Source Charge 31 V = 80V gs DS Q Gate-to-Drain Mille) Charge 44 V = 10V gd GS t Turn-On Delay Time 24 ns V = 65V d(on) DD t Rise Time 80 I = 58A r D t Turn-Off Delay Time 55 R = 4.1 d(off) G t Fall Time 50 V = 10V f GS C Input Capacitance 5150 pF V = 0V iss GS C Output Capacitance 360 V = 50V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz rss C eff. (ER) 420 V = 0V, V = 0V to 80V , See Fig.11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 500 V = 0V, V = 0V to 80V , See Fig. 5 oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol S 88 D (Body Diode) showing the G I Pulsed Source Current 380 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 58A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 38 56 ns rr J R 51 77 T = 125C I = 58A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 61 92 nC rr J 110 170 T = 125C J I T = 25C Reverse Recovery Current 2.8 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Package limitation current is 75A. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.14mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended R = 25, I = 58A, V =10V. Part not recommended for use footprint and soldering techniques refer to application note AN-994. G AS GS R is measured at T approximately 90C. above this value. J 2 R (end of life) for D Pak and TO-262 = 0.75C/W. Note: This is the maximum I 58A, di/dt 650A/s, V V , T 175C. JC SD DD (BR)DSS J measured value after 1000 temperature cycles from -55 to 150C and is Pulse width 400s duty cycle 2%. accounted for by the physical wearout of the die attach medium. 2 www.irf.com