StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications V 40V D DSS PWM Inverterized topologies Battery powered circuits R 0.55m DS(on) typ. Half-bridge and full-bridge topologies G 0.75m max Electronic ballast applications I 522A Synchronous rectifier applications D (Silicon Limited) S Resonant mode power supplies I 240A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity Tube 50 IRFS7430-7PPbF 2 IRFS7430-7PPbF D Pak-7Pin Tape and Reel Left 800 IRFS7430TRL7PP 4.0 600 I = 100A D Limited By Package 500 3.0 400 2.0 300 T = 125C J 200 1.0 100 T = 25C J 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFS7430-7PPbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 522 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 369 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 240 D C GS I Pulsed Drain Current 1200* DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E 764 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 1454 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.4 JC C/W Junction-to-Ambient R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 26 mV/C Reference to 25C, I = 2mA D (BR)DSS J 0.55 0.75 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 0.93 V = 6V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.2 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 153H, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1403A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . C oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 54A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details: