StrongIRFET IRFS7734-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications V 75V D DSS Battery powered circuits R typ. 2.6m DS(on) Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies I 197A D OR-ing and redundant power switches Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G D S Gate Drain Source Base Part Number Package Type Standard Pack Complete Part Number Form Quantity Tube 50 IRFS7734-7PPbF IRFS7734-7PPbF D2Pak-7PIN Tape and Reel Left 800 IRFS7734TRL7PP 200 12 I = 100A D 10 150 8 6 T = 125C 100 J 4 50 2 T = 25C J 0 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) GS T , CaseTemperature (C) C Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 7, 2015 R (on), Drain-to -Source On Resistance m( ) DS I , Drain Current (A) D IRFS7734-7PPbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 197 D C GS I T = 100C Continuous Drain Current, V 10V 139 A D C GS I Pulsed Drain Current 600 DM P T = 25C Maximum Power Dissipation 294 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E 350 AS (Thermally limited) Single Pulse Avalanche Energy mJ E 670 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 14, 15, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.51 C/W JC Junction-to-Ambient 40 R JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 53 mV/C Reference to 25C, I = 1mA V /T D (BR)DSS J R Static Drain-to-Source On-Resistance 2.6 3.05 V = 10V, I = 100A m DS(on) GS D 3.1 V = 6.0V, I = 50A m GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 75 V, V = 0V DSS DS GS 150 V = 75V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.07mH, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1314A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C.. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: