IRFS4227PbF IRFSL4227PbF Features Key Parameters Advanced Process Technology V max 200 V DS Key Parameters Optimized for PDP Sustain, typ. V 240 V Energy Recovery and Pass Switch Applications DS (Avalanche) Low E Rating to Reduce Power PULSE R typ. 10V m 22 DS(ON) Dissipation in PDP Sustain, Energy Recovery I max T = 100C 130 A RP C and Pass Switch Applications T max 175 C J Low Q for Fast Response G High Repetitive Peak Current Capability for D D D Reliable Operation Short Fall & Rise Times for Fast Switching 175C Operating Junction Temperature for S D S Improved Ruggedness G D G G Repetitive Avalanche Capability for 2 D Pak TO-262 Robustness and Reliability S IRFS4227PbF IRFSL4227PbF GD S Gate Drain Source Description HEXFET Power MOSFET MOSFET MOSFET %& ( ) * * ) MOSFET * * Absolute Maximum Ratings Max. Parameter Units V Gate-to-Source Voltage 30 V GS I T = 25C Continuous Drain Current, V 10V 62 D C GS I T = 100C Continuous Drain Current, V 10V 44 D C GS A I 260 Pulsed Drain Current DM I T = 100C 130 Repetitive Peak Current RP C P T = 25C Power Dissipation 330 D C W P T = 100C 190 Power Dissipation D C Linear Derating Factor 2.2 W/C T -40 to + 175 Operating Junction and J T Storage Temperature Range C STG Soldering Temperature for 10 seconds 300 Mounting Torque, 6-32 or M3 Screw 10lbf in (1.1N m) N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.45* JC 2 Junction-to-Ambient (PCB Mounted) D Pak R 40 JA 2 * R (end of life) for D Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 8 www.irf.com 1 12/06/08 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 200 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 170 mV/C D DSS J R V = 10V, I = 46A Static Drain-to-Source On-Resistance 22 26 m DS(on) GS D V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -13 mV/C GS(th) J I V = 200V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 200V, V = 0V, T = 125C 200 A DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 46A Forward Transconductance 49 S fs DS D V = 100V, I = 46A, V = 10V Q Total Gate Charge 70 98 nC DD D GS g Q Gate-to-Drain Charge 23 gd V = 100V, V = 10V t Turn-On Delay Time 33 DD GS d(on) I = 46A t Rise Time 20 ns r D t R = 2.5 Turn-Off Delay Time 21 d(off) G t Fall Time 31 See Fig. 22 f t V = 160V, V = 15V, R = 4.7 Shoot Through Blocking Time 100 ns st DD GS G L = 220nH, C= 0.4F, V = 15V GS 570 E V = 160V, R = 4.7, T = 25C Energy per Pulse J PULSE DS G J L = 220nH, C= 0.4F, V = 15V GS 910 V = 160V, R = 4.7, T = 100C DS G J C Input Capacitance 4600 V = 0V GS iss C V = 25V Output Capacitance 460 pF oss DS C = 1.0MHz, Reverse Transfer Capacitance 91 rss V = 0V, V = 0V to 160V C eff. Effective Output Capacitance 360 oss GS DS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Typ. Max. Parameter Units E 140 Single Pulse Avalanche Energy mJ AS E Repetitive Avalanche Energy 46 mJ AR V 240 Repetitive Avalanche Voltage V DS(Avalanche) I Avalanche Current 37 A AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C MOSFET symbol Continuous Source Current S C 62 (Body Diode) A showing the I integral reverse Pulsed Source Current SM 260 p-n junction diode. (Body Diode) V T = 25C, I = 46A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 46A, V = 50V t Reverse Recovery Time 100 150 ns J F DD rr Q Reverse Recovery Charge 430 640 nC di/dt = 100A/s rr 2 www.irf.com