StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications V 75V D DSS BLDC motor drive applications Battery powered circuits R typ. 2.2m DS(on) Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications I 246A Resonant mode power supplies D (Silicon Limited) S OR-ing and redundant power switches I 195A D (Package Limited) DC/DC and AC/DC converters DC/AC inverters D D Benefits S S S D G Improved gate, avalanche and dynamic dV/dt ruggedness D G G Fully characterized capacitance and avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt capability D2Pak TO-262 IRFB7730PbF Lead-free, RoHS compliant IRFS7730PbF IRFSL7730PbF G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7730PbF TO-220 Tube 50 IRFB7730PbF IRFSL7730PbF TO-262 Tube 50 IRFSL7730PbF 2 IRFS7730PbF D -Pak Tube 50 IRFS7730PbF Tape and Reel Left 800 IRFS7730TRLPbF 8 250 I = 100A D Limited by package 200 6 T = 125C J 150 4 100 2 50 T = 25C J 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB/S/SL7730PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 246 D C GS T = 100C Continuous Drain Current, V 10V (Silicon Limited) 174 I D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 984* DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics Symbol Parameter Max. Units E Single Pulse Avalanche Energy 465 AS (Thermally limited) mJ E 898 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient (TO-220) 62 JA 2 R Junction-to-Ambient (PCB Mount) (D Pak) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 40 mV/C Reference to 25C, I = 1mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.2 2.6 m V = 10V, I = 100A DS(on) GS D 2.6 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D 1.0 V = 75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 75V,V = 0V,T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.1 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 93H, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1626A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 42A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: