PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 24.5m Repetitive Avalanche Allowed up to Tjmax DS(on) G Lead-Free I = 30A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of I-Pak D-Pak IRFU4105ZPbF applications. IRFR4105ZPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) GS 30 D C I T = 100C Continuous Drain Current, V 10V GS 21 A D C Pulsed Drain Current I 120 DM P T = 25C Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 29 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) 46 AS Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.12 JC Junction-to-Ambient (PCB mount) R JA 40 C/W R Junction-to-Ambient 110 JA HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 19 24.5 V = 10V, I = 18A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 16 S V = 15V, I = 18A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 18 27 I = 18A D Q gs Gate-to-Source Charge 5.3 nC V = 44V DS Q gd Gate-to-Drain Mille) Charge 7.0 V = 10V GS t d(on) Turn-On Delay Time 10 V = 28V DD t r Rise Time 40 I = 18A D t d(off) Turn-Off Delay Time 26 ns R = 24.5 G t f Fall Time 24 V = 10V GS L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 740 V = 0V GS C Output Capacitance 140 V = 25V oss DS C rss Reverse Transfer Capacitance 74 pF = 1.0MHz C Output Capacitance 450 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 110 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 180 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 30 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 120 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 19 29 ns T = 25C, I = 18A, V = 28V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 14 21 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com