IRFZ44EPBF Infineon

IRFZ44EPBF electronic component of Infineon
IRFZ44EPBF Infineon
IRFZ44EPBF MOSFETs
IRFZ44EPBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRFZ44EPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFZ44EPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRFZ44EPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
Datasheet: IRFZ44EPBF Datasheet (PDF)
Price (USD)
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Obsolete

Availability 0
MOQ : 1000
Multiples : 1000
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1000$ 0.7935
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MOQ : 1000
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1000$ 0.595
2000$ 0.571
5000$ 0.5685
10000$ 0.5633
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MOQ : 25
Multiples : 25
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25$ 0.7567
250$ 0.6227
1000$ 0.6093
2000$ 0.6026
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MOQ : 57
Multiples : 1
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57$ 0.5655
100$ 0.5655
300$ 0.5655
1250$ 0.5655
4000$ 0.5655
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Availability 0
MOQ : 1
Multiples : 1
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1$ 1.2595
10$ 0.9831
100$ 0.8025
500$ 0.7067
1000$ 0.6621
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Availability 0
MOQ : 1
Multiples : 1
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1$ 1.5616
10$ 1.3302
23$ 0.8242
63$ 0.7808
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MOQ : 1000
Multiples : 1000
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1000$ 0.6269
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MOQ : 54
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54$ 1.2798
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MOQ : 158
Multiples : 158
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158$ 0.9719
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MOQ : 58
Multiples : 58
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58$ 0.9809
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Availability 0
MOQ : 1
Multiples : 1
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1$ 1.2943
10$ 1.0821
50$ 0.7444
100$ 0.6432
500$ 0.5974
1000$ 0.577
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Obsolete

Availability 0
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.75
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Availability 0
MOQ : 14
Multiples : 14
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14$ 1.5309
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Obsolete
   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate Charge
On-State Resistance
Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFZ44EPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFZ44EPBF and other electronic components in the MOSFETs category and beyond.

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PD - 94822 IRFZ44EPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D V = 60V DSS 175C Operating Temperature Fast Switching R = 0.023 Fully Avalanche Rated DS(on) G Lead-Free I = 48A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 48 D C GS I T = 100C Continuous Drain Current, V 10V 34 A D C GS I Pulsed Drain Current 192 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 220 mJ AS I Avalanche Current 29 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 11/10/03IRFZ44EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.063 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.023 V = 10V, I = 29A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 15 S V = 30V, I = 29A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 60 I = 29A g D Q Gate-to-Source Charge 13 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 23 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 30V d(on) DD t Rise Time 60 I = 29A r D ns t Turn-Off Delay Time 70 R = 15 d(off) G t Fall Time 70 R = 1.1, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1360 V = 0V iss GS C Output Capacitance 420 V = 25V oss DS C Reverse Transfer Capacitance 160 pF = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 48 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 192 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 29A, V = 0V SD J S GS t Reverse Recovery Time 69 104 ns T = 25C, I = 29A rr J F Q Reverse Recovery Charge 177 266 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I 29A, di/dt 320A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J Pulse width 300s duty cycle 2%. Starting T = 25C, L = 520H J R = 25, I = 29A. (See Figure 12) G AS 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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