IRMOSFET IRL3803PbF Logic - Level Gate Drive D V 30V Advanced Process Technology DSS Ultra Low On-Resistance G R max. 0.006 DS(on) Dynamic dv/dt Rating 175C Operating Temperature S I 140A D Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are TO-220AB well known for, provides the designer with an extremely efficient IRL3803PbF and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- G D S industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the Gate Drain Source TO-220 contribute to its wide acceptance throughout the industry. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL3803PbF TO-220 Tube 50 IRL3803PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V D C GS 140 I T = 100C Continuous Drain Current, V 10V A D C GS 98 I Pulsed Drain Current DM 470 P T = 25C Maximum Power Dissipation D C 200 W Linear Derating Factor W/C 1.3 V Gate-to-Source Voltage V 16 GS E Single Pulse Avalanche Energy mJ AS 610 I Avalanche Current A AR 71 E Repetitive Avalanche Energy mJ AR 20 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC Case-to-Sink, Flat, Greased Surface 0.50 C/W R JC Junction-to-Ambient 62 R JA 1 Rev. 2.1, 2021-02-25 IRL3803PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA D (BR)DSS J 0.006 V = 10V, I = 71A Static Drain-to-Source On- GS D R DS(on) Resistance 0.009 V = 4.5V, I = 59A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 55 S V = 25V, I = 71A DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 140 I = 71A g D Q Gate-to-Source Charge 41 nC V = 24V gs DS Q Gate-to-Drain Charge 78 V = 4.5V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = 15V d(on) DD t Rise Time 230 I = 71A r D ns t Turn-Off Delay Time 29 d(off) R = 1.3 G t Fall Time 35 R = 0.2 See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 5000 V = 0V iss GS C Output Capacitance 1800 pF V = 25V oss DS C Reverse Transfer Capacitance 880 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 140 S (Body Diode) showing the A Pulsed Source Current integral reverse I 470 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 71A,V = 0V SD J S GS t Reverse Recovery Time 120 180 ns T = 25C ,I = 71A rr J F Q Reverse Recovery Charge 450 680 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) V = 15V, starting T = 25C, L = 180H, R = 25, I = 20A.(See Figure 12) DD J G AS I 71A, di/dt 130A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature for recommended current- handling of the package refer to Design TIP 93-4 2 Rev. 2.1, 2021-02-25