X-On Electronics has gained recognition as a prominent supplier of IRL3803PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL3803PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL3803PBF Infineon

IRL3803PBF electronic component of Infineon
IRL3803PBF Infineon
IRL3803PBF MOSFETs
IRL3803PBF  Semiconductors

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See Product Specifications
Part No. IRL3803PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Datasheet: IRL3803PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 1.5988 ea
Line Total: USD 12.79 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 10
Multiples : 10
10 : USD 1.1809
100 : USD 1.1018
500 : USD 1.0044

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 1.0202

0
Ship by Fri. 27 Jun to Wed. 02 Jul
MOQ : 1
Multiples : 1
1 : USD 2.7826
10 : USD 2.4832
30 : USD 2.2957
100 : USD 2.1375
500 : USD 2.0328
1000 : USD 1.989

0
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 6.0583
10 : USD 2.1852
100 : USD 1.7502
500 : USD 1.4292
1000 : USD 1.367

0
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 2.996
10 : USD 1.862
13 : USD 1.414
34 : USD 1.344
1000 : USD 1.302

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 316
Multiples : 1
316 : USD 1.5322
500 : USD 1.467
1000 : USD 1.3854

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 316
Multiples : 1
316 : USD 1.5322
500 : USD 1.467
1000 : USD 1.3854

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 316
Multiples : 1
316 : USD 1.5322
500 : USD 1.467
1000 : USD 1.3854

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 316
Multiples : 1
316 : USD 1.5322
500 : USD 1.467
1000 : USD 1.3854

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 8
Multiples : 1
8 : USD 1.5988
10 : USD 1.3927
100 : USD 1.2683
250 : USD 1.2591
500 : USD 1.1578
1000 : USD 0.9519
2000 : USD 0.9422

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 36
Multiples : 1
36 : USD 1.1293

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 10
Multiples : 1
10 : USD 1.9928
100 : USD 1.657
250 : USD 1.6343
500 : USD 1.404
1000 : USD 1.0181
2000 : USD 1.008

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Features Of Semiconductor Devices
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate Charge
On-State Resistance
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IRL3803PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL3803PBF and other electronic components in the MOSFETs category and beyond.

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IRMOSFET IRL3803PbF Logic - Level Gate Drive D V 30V Advanced Process Technology DSS Ultra Low On-Resistance G R max. 0.006 DS(on) Dynamic dv/dt Rating 175C Operating Temperature S I 140A D Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are TO-220AB well known for, provides the designer with an extremely efficient IRL3803PbF and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- G D S industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the Gate Drain Source TO-220 contribute to its wide acceptance throughout the industry. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL3803PbF TO-220 Tube 50 IRL3803PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V D C GS 140 I T = 100C Continuous Drain Current, V 10V A D C GS 98 I Pulsed Drain Current DM 470 P T = 25C Maximum Power Dissipation D C 200 W Linear Derating Factor W/C 1.3 V Gate-to-Source Voltage V 16 GS E Single Pulse Avalanche Energy mJ AS 610 I Avalanche Current A AR 71 E Repetitive Avalanche Energy mJ AR 20 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC Case-to-Sink, Flat, Greased Surface 0.50 C/W R JC Junction-to-Ambient 62 R JA 1 Rev. 2.1, 2021-02-25 IRL3803PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA D (BR)DSS J 0.006 V = 10V, I = 71A Static Drain-to-Source On- GS D R DS(on) Resistance 0.009 V = 4.5V, I = 59A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 55 S V = 25V, I = 71A DS D 25 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 140 I = 71A g D Q Gate-to-Source Charge 41 nC V = 24V gs DS Q Gate-to-Drain Charge 78 V = 4.5V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = 15V d(on) DD t Rise Time 230 I = 71A r D ns t Turn-Off Delay Time 29 d(off) R = 1.3 G t Fall Time 35 R = 0.2 See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 5000 V = 0V iss GS C Output Capacitance 1800 pF V = 25V oss DS C Reverse Transfer Capacitance 880 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 140 S (Body Diode) showing the A Pulsed Source Current integral reverse I 470 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 71A,V = 0V SD J S GS t Reverse Recovery Time 120 180 ns T = 25C ,I = 71A rr J F Q Reverse Recovery Charge 450 680 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) V = 15V, starting T = 25C, L = 180H, R = 25, I = 20A.(See Figure 12) DD J G AS I 71A, di/dt 130A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature for recommended current- handling of the package refer to Design TIP 93-4 2 Rev. 2.1, 2021-02-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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