PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET V -30 V DS V 20 V G 1 GS Max R DS(on) max 64 3 D m ( V = -10V) GS R S 2 DS(on) max TM 103 m Micro3 (SOT-23) ( V = -4.5V) GS IRLML9301TRPbF Application(s) Features and Benefits Benefits Features Low R ( 64m) Lower switching losses DS(on) Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL1, Consumer qualification Increased reliability Symbol Parameter Max. Units V V DS Drain-Source Voltage -30 I T = 25C Continuous Drain Current, V 10V D A GS -3.6 I T = 70C Continuous Drain Current, V 10V -2.9 A D A GS I DM Pulsed Drain Current -15 P T = 25C D A Maximum Power Dissipation 1.3 W P T = 70C 0.8 D A Maximum Power Dissipation Linear Derating Factor 0.01 W/C V 20 V GS Gate-to-Source Voltage T T -55 to + 150 J, STG Junction and Storage Temperature Range C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient 100 C/W R JA 99 Junction-to-Ambient (t<10s) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 02/09/12 Electric Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250 A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = -1mA D 51 64 V = -10V, I = -3.6A GS D R Static Drain-to-Source On-Resistance m DS(on) 82 103 V = -4.5V, I = -2.9A GS D V GS(th) Gate Threshold Voltage -1.3 -2.4 V V = V , I = -10 A DS GS D I 1 V =-24V, V = 0V DSS DS GS Drain-to-Source Leakage Current A 150 V = -24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage -100 V = -20V GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS R G Internal Gate Resistance 12 gfs Forward Transconductance 5.0 S V = -10V, I =-3.6A DS D Q g Total Gate Charge 4.8 I = -3.6A D Q Gate-to-Source Charge 1.2 nC V =-15V gs DS Q gd Gate-to-Drain Mille) Charge 2.5 V = -4.5V GS t Turn-On Delay Time 9.6 V =-15V d(on) DD t Rise Time 19 I = -1A r D ns t d(off) Turn-Off Delay Time 16 R = 6.8 G t f Fall Time 15 V = -4.5V GS C Input Capacitance 388 V = 0V iss GS C oss Output Capacitance 93 pF V = -25V DS C rss Reverse Transfer Capacitance 65 = 1.0KHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -1.3 (Body Diode) showing the G A I Pulsed Source Current integral reverse SM S -15 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -1.2 V T = 25C, I = -1.3A, V = 0V J S GS t rr Reverse Recovery Time 14 21 ns T = 25C, V = -24V, I =-1.3A J R F Q di/dt = 100A/s Reverse Recovery Charge 7.2 11 nC rr 2 www.irf.com