IRLR8256PbF IRLU8256PbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC 25V 5.7m 10nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current D-Pak I-Pak Lead-Free IRLR8256PbF IRLU8256PbF RoHS compliant GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 25 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 81 I T = 25C C GS D I T = 100C Continuous Drain Current, V 10V 57 GS A D C Pulsed Drain Current I 325 DM Maximum Power Dissipation P T = 25C 63 C D W Maximum Power Dissipation P T = 100C 31 D C Linear Derating Factor 0.42 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R JC 2.4 Junction-to-Ambient (PCB Mount) R JA 50 C/W R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 08/02/11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV 25 V V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage GS D V /T 18 mV/C Reference to 25C, I = 1mA DSS J Breakdown Voltage Temp. Coefficient D 4.2 5.7 V = 10V, I = 25A GS D R Static Drain-to-Source On-Resistance m DS(on) 6.7 8.5 V = 4.5V, I = 20A GS D V GS(th) 1.35 1.8 2.35 V Gate Threshold Voltage V = V , I = 25A DS GS D V /T GS(th) J -7.2 mV/C Gate Threshold Voltage Coefficient 1.0 V = 20V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 20V, V = 0V, T = 125C DS GS J 100 V = 20V Gate-to-Source Forward Leakage GS I GSS nA -100 V = -20V Gate-to-Source Reverse Leakage GS gfs 81 S V = 13V, I = 20A Forward Transconductance DS D Q 10 15 g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 2.3 V = 13V DS Q gs2 Post-Vth Gate-to-Source Charge 1.6 nC V = 4.5V GS Q gd 3.6 I = 20A Gate-to-Drain Charge D Q godr 2.6 See Fig. 16 Gate Charge Overdrive Q sw Switch Charge (Q + Q ) 5.1 gs2 gd Q oss 9.0 nC V = 16V, V = 0V Output Charge DS GS R Gate Resistance 2.5 G 3.9 t d(on) 9.7 V = 13V, V = 4.5V Turn-On Delay Time DD GS t 46 I = 20A r Rise Time D ns t 12 d(off) Turn-Off Delay Time R = 1.8 G t 8.5 f Fall Time See Fig. 14 C iss 1470 V = 0V Input Capacitance GS C oss 453 pF V = 13V Output Capacitance DS C rss 185 = 1.0MHz Reverse Transfer Capacitance Avalanche Characteristics Parameter Typ. Max. Units E AS 86 mJ Single Pulse Avalanche Energy I AR 20 A Avalanche Current E 6.3 mJ AR Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol S Continuous Source Current 81 (Body Diode) showing the A I SM integral reverse Pulsed Source Current 325 (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 20A, V = 0V Diode Forward Voltage J S GS t rr 19 29 ns T = 25C, I = 20A, V = 13V Reverse Recovery Time DD J F Q di/dt = 250A/ s rr 17 26 nC Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com