IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power 30V 8.9m 10nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak IRLR8729PbF IRLU8729PbF and Current Lead-Free GD S RoHS compliant Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 58 GS D C Continuous Drain Current, V 10V 41 I T = 100C GS A D C Pulsed Drain Current I 260 DM Maximum Power Dissipation P T = 25C C 55 W D Maximum Power Dissipation P T = 100C 27 D C Linear Derating Factor 0.37 W/C T Operating Junction and C -55 to + 175 J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 2.73 Junction-to-Ambient (PCB Mount) R JA 50 C/W R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 11/23/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV 30 V V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage GS D V / T DSS J Breakdown Voltage Temp. Coefficient 21mV/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 6.0 8.9 V = 10V, I = 25A GS D m 8.9 11.9 V = 4.5V, I = 20A GS D V GS(th) 1.35 1.8 2.35 V V = V , I = 25A Gate Threshold Voltage DS GS D V /T GS(th) J -6.2 mV/C Gate Threshold Voltage Coefficient I DSS 1.0 V = 24V, V = 0V Drain-to-Source Leakage Current DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I 100 V = 20V GSS Gate-to-Source Forward Leakage GS nA -100 = -20V Gate-to-Source Reverse Leakage V GS gfs 91 S V = 15V, I = 20A Forward Transconductance DS D Q g 10 16 Total Gate Charge Q gs1 2.1 V = 15V Pre-Vth Gate-to-Source Charge DS Q gs2 1.3 nC V = 4.5V Post-Vth Gate-to-Source Charge GS Q gd 4.0 I = 20A Gate-to-Drain Charge D Q 2.6 See Fig. 16 godr Gate Charge Overdrive Q 4.8 sw Switch Charge (Q + Q ) gs2 gd Q oss 6.3 nC V = 16V, V = 0V Output Charge DS GS R Gate Resistance 1.6 2.7 G t d(on) 10 V = 15V, V = 4.5V Turn-On Delay Time DD GS t r 47 I = 20A Rise Time D ns t d(off) 11 R = 1.8 Turn-Off Delay Time G t 10 f Fall Time See Fig. 14 C 1350 V = 0V iss Input Capacitance GS C oss 280 pF V = 15V Output Capacitance DS C rss 120 = 1.0MHz Reverse Transfer Capacitance Avalanche Characteristics Parameter Typ. Max. Units E AS 74 mJ Single Pulse Avalanche Energy I AR 20 A Avalanche Current E AR 5.5 mJ Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 58 (Body Diode) showing the A I SM integral reverse Pulsed Source Current 260 (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 20A, V = 0V Diode Forward Voltage J S GS t rr 16 24 ns T = 25C, I = 20A, V = 15V Reverse Recovery Time DD J F Q di/dt = 300A/s rr 19 29 nC Reverse Recovery Charge t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Forward Turn-On Time 2 www.irf.com