PD- 95084A Logic-Level Gate Drive Ultra Low On-Resistance D Surface Mount (IRLR2905) V = 55V DSS Straight Lead (IRLU2905) Advanced Process Technology R = 0.027 DS(on) Fast Switching G Fully Avalanche Rated I = 42A D Lead-Free S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D-Pak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or TO-251AA TO-252AA wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 42 D C GS I T = 100C Continuous Drain Current, V 10V 30 A D C GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 12/7/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.070 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.027 V = 10V, I = 25A GS D R Static Drain-to-Source On-Resistance DS(on) 0.030 W V = 5.0V, I = 25A GS D 0.040 V = 4.0V, I = 21A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 21 S V = 25V, I = 25A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 48 I = 25A g D Q Gate-to-Source Charge 8.6 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 25 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 11 V = 28V d(on) DD t Rise Time 84 I = 25A r D ns t Turn-Off Delay Time 26 R = 3.4, V = 5.0V d(off) G GS t Fall Time 15 R = 1.1, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1700 V = 0V iss GS C Output Capacitance 400 pF V = 25V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 42 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 160 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 25A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C, I = 25A rr J F Q Reverse RecoveryCharge 210 320 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Caculated continuous current based on maximum allowable max. junction temperature. ( See fig. 11 ) junction temperature Package limitation current = 20A. V = 25V, starting T = 25C, L =470H This is applied for I-PAK, L of D-PAK is measured between DD J S R = 25, I = 25A. (See Figure 12) G AS lead and center of die contact. I 25A, di/dt 270A/s, V V , Uses IRLZ44N data and test conditions. SD DD (BR)DSS T 175C J Pulse width 300s duty cycle 2%. 2 www.irf.com