X-On Electronics has gained recognition as a prominent supplier of SMBT 3904 E6327 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMBT 3904 E6327 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMBT 3904 E6327 Infineon

SMBT 3904 E6327 electronic component of Infineon
SMBT 3904 E6327 Infineon
SMBT 3904 E6327 Bipolar Transistors - BJT
SMBT 3904 E6327  Semiconductors

Images are for reference only
See Product Specifications
Part No. SMBT 3904 E6327
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT AF GP BJT NPN 40V 0.2A
Datasheet: SMBT 3904 E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.275 ea
Line Total: USD 0.28 
Availability - 56680
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
56680
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.275
10 : USD 0.195
100 : USD 0.1188
1000 : USD 0.0484
3000 : USD 0.044
9000 : USD 0.0352
24000 : USD 0.0319
45000 : USD 0.0308
99000 : USD 0.0286

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMBT 3904 E6327 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBT 3904 E6327 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3904/MMBT3904 s1A 1=B 2=E 3=C - - - SOT23 SMBT3904S s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 60 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mV Total power dissipation- P tot T 71C, SOT23, SMBT3904 330 S T 115C, SOT363, SMBT3904S 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS SMBT3904/MMBT3904 240 SMBT3904S 140 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2012-08-21 1SMBT3904...MMBT3904 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 60 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I - - 50 nA CBO V = 30 V, I = 0 CB E 1) - DC current gain h FE I = 100 A, V = 1 V 40 - - C CE I = 1 mA, V = 1 V 70 - - C CE I = 10 mA, V = 1 V 100 - 300 C CE I = 50 mA, V = 1 V 60 - - C CE I = 100 mA, V = 1 V 30 - - C CE 1) Collector-emitter saturation voltage V V CEsat I = 10 mA, I = 1 mA - - 0.2 C B I = 50 mA, I = 5 mA - - 0.3 C B 1) Base emitter saturation voltage V BEsat I = 10 mA, I = 1 mA 0.65 - 0.85 C B I = 50 mA, I = 5 mA - - 0.95 C B 1 Pulse test: t < 300s D < 2% 2012-08-21 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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