SPB18P06PGATMA1 Infineon

SPB18P06PGATMA1 electronic component of Infineon
SPB18P06PGATMA1 Infineon
SPB18P06PGATMA1 MOSFETs
SPB18P06PGATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SPB18P06PGATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPB18P06PGATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SPB18P06PGATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -60V 18.6A D2PAK-2
Datasheet: SPB18P06PGATMA1 Datasheet (PDF)
Price (USD)
1: USD 1.775 ea
Line Total: USD 1.78 
Availability : 881
  
Ship by Thu. 20 Nov to Mon. 24 Nov
QtyUnit Price
1$ 1.775
10$ 0.7537
25$ 0.7236
100$ 0.5511
250$ 0.5489
500$ 0.5104
1000$ 0.4895
2000$ 0.4884
5000$ 0.4851

Availability 881
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.775
10$ 0.7537
25$ 0.7236
100$ 0.5511
250$ 0.5489
500$ 0.5104
1000$ 0.4895
2000$ 0.4884
5000$ 0.4851


Availability 945
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 406
Multiples : 1
QtyUnit Price
406$ 0.6413


Availability 1940
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.5924
2000$ 0.5614
3000$ 0.561
5000$ 0.5417
7000$ 0.5285


Availability 950
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 575
Multiples : 1
QtyUnit Price
575$ 0.8164
1000$ 0.753
10000$ 0.6713
100000$ 0.5625


Availability 11640
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.7455
6000$ 0.6812
9000$ 0.6339
12000$ 0.5977

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SPB18P06PGATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPB18P06PGATMA1 and other electronic components in the MOSFETs category and beyond.

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SPB18P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.6 A D Avalanche rated dv /dt rated PG-TO263-3 175C operating temperature Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free Packing SPB18P06PG PG-TO263-3 1000 pcs / reel 18P06P Yes Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit steady state Continuous drain current I T =25 C -18.7 A D A T =100 C -13.2 A Pulsed drain current I T =25 C -74.8 D,pulse A E 151 Avalanche energy, single pulse I =18.7 A, R =25 mJ AS D GS Avalanche energy, periodic limited by E 8 AR T jmax I =18.7 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =-200 A/s, -6 kV/s T =175 C j,max V Gate source voltage 20 V GS P T =25 C 81.1 Power dissipation W tot A T , T Operating and storage temperature-55 ... +175 C j stg ESD class Soldering temperature 260 C 55/175/56 IEC climatic category DIN IEC 68-1 Rev 1.6 page 1 2012-09-07SPB18P06P G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.85 K/W thJC junction - case Thermal resistance, R -- 62 thJA junction - ambient,leaded R SMD verson, device on PCB: minimal footprint - - 62 K/W thJA 2 1) 6 cm cooling area -- 40 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250 A -60 - - V (BR)DSS GS D V =V , I =- DS GS D V Gate threshold voltage -2.1 3 -4 GS(th) 1000 A V =-60 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-60 V, V =0 V, DS GS - -10 -100 T =150 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS R V =-10 V, I =-13.2 A Drain-source on-state resistance - 101 130 m DS(on) GS D V >2 I R , DS D DS(on)max Transconductance g 510 - S fs I =-13.2 A D 1) 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. FCB is vertical without blown air. Rev 1.6 page 2 2012-09-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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