SPD 07N20 G SIPMOS Power Transistor Product Summary Features Drain source voltage 200 V V DS N channel Drain-Source on-state resistance R 0.4 DS(on) Enhancement mode Continuous drain current 7 A I D Avalanche rated dv/dt rated 2 1 1 3 2 3 Pin 1 Pin 2 Pin 3 Type Package Pb-free Packaging G D S SPD07N20 G PG-TO252 Yes Tape and Reel SPU07N20 G PG-TO251 Yes Tube Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current A I D T = 25 C 7 C T = 100 C 4.5 C Pulsed drain current 28 IDpulse T = 25 C C Avalanche energy, single pulse 120 mJ E AS I = 7 A, V = 50 V, R = 25 D DD GS 4 Avalanche energy, periodic limited by T E jmax AR 6 kV/s Reverse diode dv/dt dv/dt I = 7 A, V = 160 V, di/dt = 200 A/s, S DS T = 175 C jmax Gate source voltage V V 20 GS Power dissipation 40 W P tot T = 25 C C Operating and storage temperature -55... +175 C T , T j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.5 Page 1 2013-06-27SPD 07N20 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case - 3.1 K/W R thJC Thermal resistance, junction - ambient, leded - - 100 R thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 1) 6 cm cooling area - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage 200 - - V V (BR)DSS V = 0 V, I = 0.25 mA GS D 2.1 3 4 Gate threshold voltage, V = V V GS DS GS(th) I = 1 mA D Zero gate voltage drain current A I DSS V = 200 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 200 V, V = 0 V, T = 125 C - - 100 DS GS j Gate-source leakage current I - 10 100 nA GSS V = 20 V, V = 0 V GS DS Drain-Source on-state resistance R DS(on) V = 10 V, I = 4.5 A - 0.3 0.4 GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2. 5 Page 2 2013-06-27