SPW47N65C3 TM CoolMOS Power Transistor Product Summary Features V 650 V DS Worldwide best R in TO247 ds,on R 0.07 DS(on),max Low gate charge Q 255 nC g,typ Extreme dv/dt rated High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant PG-TO247-3-1 Type Package Marking SPW47N65C3 PG-TO247-3-1 47N65C3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 47 A D C T =100 C 30 C 2) 141 I T =25 C Pulsed drain current D,pulse C E I =3.5 A, V =50 V Avalanche energy, single pulse 1800 mJ AS D DD 2),3) E I =7 A, V =50 V 1 Avalanche energy, repetitive t AR D DD AR 2),3) I 7 Avalanche current, repetitive t A AR AR V =0...480 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS Gate source voltage V static 20 V GS 30 AC (f >1 Hz) Power dissipation P T =25 C 415 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Mounting torque M3 and M3.5 screws 60 Ncm Rev. 1.2 page 1 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-ASPW47N65C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I 47 Continuous diode forward current A S T =25 C C 2) I 141 Diode pulse current S,pulse Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.3 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 650 - - V (BR)DSS GS D V V =V , I =2.7 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =600 V, V =0 V, DS GS I Zero gate voltage drain current - 0.5 25 A DSS T =25 C j V =600 V, V =0 V, DS GS -50- T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =30 A, GS D Drain-source on-state resistance R - 0.06 0.07 DS(on) T =25 C j V =10 V, I =30 A, GS D - 0.17 - T =150 C j R Gate resistance f =1 MHz, open drain - 0.75 - G Rev. 1.2 page 2 2008-02-12 Please note the new package dimensions arccording to PCN 2009-134-A