Product Information


CPC3703C electronic component of IXYS

N-Channel 250 V 300 mA Depletion Mode Field Effect Transistor

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 0.4872 ea
Line Total: USD 14.616

0 - Global Stock
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0 - Global Stock

Ships to you between Thu. 05 Oct to Wed. 11 Oct

MOQ : 200
Multiples : 200

Stock Image


200 : USD 0.4158
400 : USD 0.3663
800 : USD 0.313
1600 : USD 0.2926

0 - Global Stock

Ships to you between Thu. 05 Oct to Wed. 11 Oct

MOQ : 30
Multiples : 30

Stock Image


30 : USD 0.4872
200 : USD 0.4027
750 : USD 0.315
1750 : USD 0.2835

Product Category
1 Icon ROHS
Factory Pack Quantity :
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
IXA4IF1200TC electronic component of IXYS IXA4IF1200TC
IGBT Transistors XPT IGBT Copack
Stock : 1
CYG2030 electronic component of IXYS CYG2030
Interface Modules Cybergate DAA Module
Stock : 1
IXBH24N170 electronic component of IXYS IXBH24N170
IGBT Transistors BIMOSFETS 1700V 60A
Stock : 1
Hot CPC1302GSTR electronic component of IXYS CPC1302GSTR
Transistor Output Optocouplers Dual Optocoupler High-Voltage
Stock : 1
DSAI17-16A electronic component of IXYS DSAI17-16A
Diode 1.6KV 25A 2-Pin DO-203AA
Stock : 1
CPC7512Z electronic component of IXYS CPC7512Z
IXYS Integrated Circuits Switch ICs - Various Dual 1-Form-A High V, Isolated Switch
Stock : 841
IXBN75N170 electronic component of IXYS IXBN75N170
IGBT Modules 145Amps 1700V
Stock : 1
CPC1984Y electronic component of IXYS CPC1984Y
Solid State Relays - PCB Mount 600V AC/DC 1-FORM-A ENHANCED ISO PSIP
Stock : 920
CPC9909NTR electronic component of IXYS CPC9909NTR
LED Lighting Drivers 8V-550V 2.5W
Stock : 4
DSS6-0045AS-TUB electronic component of IXYS DSS6-0045AS-TUB
Schottky Diodes & Rectifiers PWR DISC-SCH
Stock : 1
Image Description
NTTFS4928NTAG electronic component of ON Semiconductor NTTFS4928NTAG

N-Channel 30 V 7.3A (Ta), 37A (Tc) 810mW (Ta), 20.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Stock : 1

FDY3000NZ electronic component of ON Semiconductor FDY3000NZ

Transistor: N-MOSFET x2; unipolar; 20V; 0.6A; 0.625W; SOT563
Stock : 9000

SI1330EDL-T1-E3 electronic component of Vishay SI1330EDL-T1-E3

MOSFET 60V Vds 20V Vgs SC70-3
Stock : 1

SSM3J35AMFV,L3F electronic component of Toshiba SSM3J35AMFV,L3F

Stock : 1

RU30C8H electronic component of Ruichips RU30C8H

MOSFET N & P Trench 30V 8A,7A 2.4V @ 250uA 15 mΩ @ 8A,10V;25 mΩ @ 6A,10V SOP-8_150mil RoHS
Stock : 0

TDM3466 electronic component of Techcode TDM3466

MOSFET N Trench 40V 200A (Tc) 2.5V @ 250uA 2.1 mΩ @ 25A,10V TO-220 RoHS
Stock : 1

CRTD110N03L electronic component of CRMICRO CRTD110N03L

MOSFET N Trench 30V 20A (Tc) 1.8V @ 250uA 11 mΩ @ 12A,10V TO-252 RoHS
Stock : 1

SI2102-TP electronic component of Micro Commercial Components (MCC) SI2102-TP

N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Stock : 1

LNG04R165 electronic component of Lonten Semiconductor LNG04R165

MOSFET N Channel 40V 39A(Tc) 2V @ 250uA 16.5mO @ 10A,10V TO-252 RoHS
Stock : 0

HSBA3056 electronic component of HUASHUO HSBA3056

MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
Stock : 1

CPC3703 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) The CPC3703 is an N-channel, depletion mode, field (BR)DGX effect transistor (FET) that utilizes IXYS Integrated 250V 4 360mA SOT-89 Circuits Divisions proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance Features in an economical silicon gate process. Our vertical High Breakdown Voltage: 250V DMOS process yields a robust device, with high Low On-Resistance: 4 max. at 25C input impedance, for use in high-power applications. Low V Voltage: -1.6 to -3.9V GS(off) The CPC3703 is a highly reliable device that has Depletion Mode Device Offers Low R DS(on) been used extensively in our Solid State Relays for at Cold Temperatures industrial and telecommunications applications. High Input Impedance Small Package Size: SOT-89 This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. Applications The CPC3703 offers a low, 4 maximum, on-state Ignition Modules resistance at 25C. Normally-On Switches Solid State Relays The CPC3703 has a minimum breakdown voltage of Converters 250V, and is available in an SOT-89 package. As with Telecommunications all MOS devices, the FET structure prevents thermal Power Supply runaway and thermal-induced secondary breakdown. Ordering Information Part Description CPC3703CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D G G D S S (SOT-89) DS-CPC3703-R07 1 www.ixysic.comINTEGRATED CIRCUITS DIVISION CPC3703 Absolute Maximum Ratings 25C (Unless Otherwise Noted) Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 V P device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V P those indicated in the operational sections of this data sheet is Pulsed Drain Current 600 mA 1 not implied. Total Package Dissipation 1.1 W Junction Temperature 125 C Operational Temperature, Ambient -55 to +125 C Storage Temperature -55 to +125 C 1 Mounted on 1 x1 x0.062 FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V V = -5V, I =100A 250 - - V (BR)DSX GS D Gate-to-Source Off Voltage V V = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperature dV /dT V = 5V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS V = -5V, V =250V - - 1 A GS DS Drain-to-Source Leakage Current I D(off) V = -5V, V =200V, T =125C - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 360 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 4 DS(on) V = 0V, I =200mA GS D Change in R with Temperature dR /dT - - 1.1 %/C DS(on) DS(on) Forward Transconductance G I = 100mA, V = 10V 225 - - m FS D DS Input Capacitance C V = -5V 327 350 ISS GS Common Source Output Capacitance C 51 65 V = 25V - pF OSS DS Reverse Transfer Capacitance C 27 35 RSS f= 1MHz Turn-On Delay Time t V = 25V 23 35 d(on) DD Rise Time t 820 I = 150mA r D - ns Turn-Off Delay Time t 17 25 d(off) V = 0V to -10V GS Fall Time t 70 f 80 R = 50 gen Source-Drain Diode Voltage Drop V 0.6 V = -5V, I =150mA - 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - C/W JA V DD Switching Waveform & Test Circuit R L 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V R gen t t on off t t t t f d(on) d(off) r D.U.T. V DS INPUT 90% 90% OUTPUT 10% 10% 0V R07 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

Ixys Corporation
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare