DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Q and R g g High dv/dt V = 1000 V DSS Nanosecond Switching I = 12 A D25 50MHz Maximum Frequency R = 0.95 DS(on) Symbol Test Conditions Maximum Ratings T = 25C to 150C J 1000 V P = 940 W V DSS DC T = 25C to 150C R = 1 M J GS V 1000 V DGR Continuous 20 V V GS Transient 30 V V GSM T = 25C c 12 A I D25 T = 25C, pulse width limited by T c JM I 72 A DM T = 25C c I 12 A AR T = 25C E c 30 mJ AR I I , di/dt 100A/ s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 940 W DRAIN DC T = 25C GATE c P 425 W DHS Derate 3.7W/C above 25C T = 25C c P 4.5 W DAMB 0.16 C/W R thJC SG1 SG2 SD1 SD2 0.35 C/W R thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate T = 25C unless otherwise specified J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 3 ma GS D 1000 V V DSS cycling capability V = V , I = 4 ma IXYS advanced low Q process DS GS D g V 2.5 5.5 V GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8 V T = 25C faster switching DS DSS J I 50 A DSS V = 0 T = 125C GS J 1 Low R mA DS(on) Very low insertion inductance (<2nH) V = 15 V, I = 0.5I GS D D25 0.95 R DS(on) No beryllium oxide (BeO) or other haz- Pulse test, t 300 S, duty cycle d 2% ardous materials V = 15 V, I = 0.5I , pulse test DS D D25 g 11 S fs Advantages T -55 +175 C J Optimized for RF and high speed switching at frequencies to 50MHz 175 C T JM Easy to mountno insulators needed High power density T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L 3 g Weight DE375-102N12A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 2000 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 150 pF oss f = 1 MHz C 30 pF rss Back Metal to any Pin C 33 pF stray 5 ns T d(on) V = 15 V, V = 0.8 V GS DS DSS T 3 ns on I = 0.5 I D DM T R = 0.2 (External) 5 ns G d(off) 8 ns T off Q 93 nC g(on) V = 10 V, V = 0.5 V GS DS DSS 16 nC Q gs I = 0.5 I D D25 42 nC Q gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS 12 A I S Repetitive pulse width limited by T JM I 72 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/ s, Q F S 0.6 RM C V = 100V R 7 A I RM For detailed device mounting and installation instructions, see the DE- Series MOSFET Mounting Instructions technical note on IXYS RFs web site at www.ixysrf.com/Technical Support/App notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045