TM TM Polar3 HiPerFET V = 300V IXFB210N30P3 DSS Power MOSFET I = 210A D25 R 14.5m DS(on) D t 250ns rr N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Rectifier S TM PLUS264 Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 300 V DSS J D S V T = 25 C to 150 C, R = 1M 300 V DGR J GS Tab V Continuous 20 V GSS V Transient 30 V GSM G = Gate D = Drain S = Source Tab = Drain I T = 25 C (Chip Capability) 210 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 550 A DM C JM I T = 25 C 105 A A C E T = 25 C 4 J AS C Features dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J Dynamic dv/dt Rating P T = 25 C 1890 W D C Avalanche Rated Fast Intrinsic Rectifier T -55 ... +150 C J Low R T 150 C DS(on) JM T -55 ... +150 C Low Drain-to-Tab Capacitance stg Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 30..120/6.7..27 N/lb C Advantages Weight 10 g Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Battery Chargers J Switch-Mode and Resonant-Mode BV V = 0V, I = 3mA 300 V DSS GS D Power Supplies V V = V , I = 8mA 2.5 5.0 V Uninterrupted Power Supplies GS(th) DS GS D AC Motor Drives I V = 20V, V = 0V 200 nA GSS GS DS High Speed Power Switching I V = V , V = 0V 50 A Applications DSS DS DSS GS T = 125 C 1.5 mA J R V = 10V, I = 0.5 I , Note 1 14.5 m DS(on) GS D DSS DS100463B(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFB210N30P3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 100 S fs DS D C 16.2 nF iss C V = 0V, V = 25V, f = 1MHz 2550 pF oss GS DS C 42 pF rss R Gate Input Resistance 1.0 Gi t 46 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 94 ns d(off) R = 1 (External) G t 13 ns f Q 268 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 80 nC gs GS DS DSS D DSS Q 72 nC gd R 0.066 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 210 A S GS I Repetitive, Pulse Width Limited by T 840 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 105A, -di/dt = 100A/ s F Q 4.1 C RM V = 100V, V = 0V I R GS 28 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537