TM V = 1000V HiPerFET IXFB38N100Q2 DSS I = 38A Power MOSFET D25 R 250m Q2-Class DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g G High dV/dt, Low t rr TM PLUS264 ( IXFB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM ( TAB ) D S I T = 25C38A D25 C I T = 25C, pulse width limited by T 152 A DM C JM G = Gate D = Drain I T = 25C38A A C S = Source TAB = Drain E T = 25C5J AS C Features dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 890 W z D C Double metal process for low gate resistance T -55 ... +150 C J z Unclamped Inductive Switching (UIS) T 150 C JM rated T -55 ... +150 C z stg Low package inductance - easy to drive and to protect T 1.6 mm (0.063 in.) from case for 10s 300 C L z Fast intrinsic rectifier T Plastic body for 10s 260 C SOLD F Mounting force 30..120/6.7..27 N / lbs Applications C Weight 10 g z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z Pulse generation z Laser drivers Symbol Test Conditions Characteristic Values Advantages (T = 25C, unless otherwise specified) J Min. Typ. Max. z TM PLUS 264 package for clip or spring BV V = 0 V, I = 1mA 1000 V mounting DSS GS D z Space savings V V = V , I = 8mA 3.0 5.5 V z GS(th) DS GS D High power density I V = 30 V, V = 0V 200 nA GSS GS DS I V = V 50 A DSS DS DSS V = 0V T = 125C 3 mA GS J R V = 10V, I = 0.5 I , Note 1 250 m DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS98949F(05/08)IXFB38N100Q2 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 24 40 S fs DS D D25 C 13.5 nF iss C V = 0V, V = 25V, f = 1MHz 1035 pF oss GS DS C 180 pF rss t 25 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 57 ns d(off) R = 1 (External) G t 15 ns f Q 250 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 60 nC gs GS DS DSS D D25 Q 105 nC gd R 0.14 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J I V = 0V 38 A S GS I Repetitive, pulse width limited by T 152 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS 300 ns t I = 25A, V = 0V rr F GS -di/dt = 100 A/s Q 1.4 C RM V = 100 V R I 9 A RM Note: 1. Pulse test, t 300s, duty cycle, d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537