TM X-Class HiPerFET V = 1000V IXFB70N100X DSS Power MOSFET I = 70A D25 D R 89m DS(on) N-Channel Enhancement Mode Avalanche Rated G S TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V G DSS J D V T = 25 C to 150 C, R = 1M 1000 V DGR J GS S Tab V Continuous 30 V GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C 70 A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 150 A DM C JM I T = 25 C25A A C E T = 25 C 2.5 J AS C P T = 25 C 1785 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM Low Q G T -55 ... +150 C stg Avalanche Rated Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 30..120 / 6.7..27 N/lb Advantages C Weight 10 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies DC-DC Converters BV V = 0V, I = 1mA 1000 V DSS GS D PFC Circuits V V = V , I = 8mA 3.5 6.0 V AC and DC Motor Drives GS(th) DS GS D Robotics and Servo Controls I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 7.5 mA J R V = 10V, I = 0.5 I , Note 1 89 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved DS100944B(11/19)IXFB70N100X Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J A E g V = 20V, I = 35A, Note 1 34 57 S fs DS D Q R R Gate Input Resistance 0.30 Gi Q1 D C 9160 pF iss R1 C V = 0V, V = 25V, f = 1MHz 2650 pF 1 2 3 oss GS DS L1 C 72 pF rss L Effective Output Capacitance C 390 pF V = 0V o(er) Energy related GS V = 0.8 V C 1500 pF DS DSS o(tr) b1 b c Time related b2 A1 e t 48 ns d(on) Back Side Resistive Switching Times 1 - Gate t 20 ns r 2,4 - Drain V = 10V, V = 0.5 V , I = 35A GS DS DSS D 4 3 - Source t 127 ns d(off) R = 1 (External) G t 9 ns f Q 350 nC g(on) Q V = 10V, V = 0.5 V , I = 35A 84 nC gs GS DS DSS D Q 190 nC gd R 0.07C/W thJC R 0.13C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 70 A S GS I Repetitive, Pulse Width Limited by T 280 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 310 ns rr I = 35A, -di/dt = 100A/ s F Q 3.5 C RM V = 100V, V = 0V R GS I 22.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537