TM TM Polar HiPerFET IXFH12N90P V = 900V DSS IXFV12N90P I = 12A Power MOSFET D25 R 1.0 IXFV12N90PS DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 900 V DSS J D S V T = 25 C to 150 C, R = 1M 900 V DGR J GS D (Tab) V Continuous 30 V GSS PLUS220SMD(IXFV S) V Transient 40 V GSM I T = 25 C12A D25 C I T = 25 C, Pulse Width Limited by T 24 A DM C JM G S I T = 25 C6A A C D (Tab) E T = 25 C 500 mJ AS C TO-247 (IXFH) dv/dt I I , V V ,T 150 C 15 V/ns S DM DD DSS J P T = 25 C 380 W D C T -55 ... +150 C J G T 150 C D JM S D (Tab) T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L G = Gate D = Drain T Plastic Body for 10s 260 C SOLD S = Source Tab = Drain M Mounting torque (TO-247) 1.13/10 Nm/lb.in d F Mounting force (PLUS220) 11..65/2.5..14.6 N/lb C Features Weight TO-247 6 g International Standard Packages PLUS220 types 4 g Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 1mA 900 V DSS GS D Applications: V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D Switch-Mode and Resonant-mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS DC-DC Converters T = 125C 1 mA J Laser Drivers AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 1.0 DS(on) GS D D25 Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS100056A(11/15) IXFH12N90P IXFV12N90P IXFV12N90PS Symbol Test Conditions Characteristic Values PLUS220 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 5.0 8.2 S fs DS D D25 R Gate input resistance 1.7 Gi C 3080 pF iss C V = 0V, V = 25V, f = 1MHz 200 pF oss GS DS C 33 pF rss t 32 ns d(on) Resistive Switching Times t 34 ns r V = 10V, V = 0.5 V , I = 0.5 I 1. GATE GS DS DSS D D25 2, 4. DRAIN t 50 ns d(off) 3. SOURCE R = 2 (External) G t 68 ns f Q 56 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 27 nC gd R 0.33 C/W thJC R (TO-247, PLUS220) 0.25 C/W thCS Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, pulse width limited by T 48 A SM JM TO-247 Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 6A, -di/dt = 100A/ s F Q 0.9 C P RM V = 100V, V = 0V R GS I 7.8 A RM Note 1: Pulse test, t 300 s duty cycle, d 2%. e 1. GATE PLUS220SMD Outline 2. DRAIN 3. SOURCE Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 1. GATE E 15.75 16.26 .610 .640 2, 4. DRAIN 3. SOURCE e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537