TM TM Polar HiperFET V = 100V IXFH170N10P DSS I = 170A Power MOSFET IXFK170N10P D25 R 9m DS(on) t 150ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D Tab V T = 25C to 175C 100 V DSS J S V T = 25C to 175C, R = 1M 100 V DGR J GS V Continuous 20 V GSS TO-264 (IXFK) V Transient 30 V GSM I T = 25C 170 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25C, Pulse Width Limited by T 350 A DM C JM G I T = 25C 60 A Tab A C D S E T = 25C 2 J AS C dv/dt I I , V V , T 175C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25C 715 W S = Source Tab = Drain D C T -55 to +175 C J T +175 C JM T -55 to +175 C stg Features T 1.6mm (0.063in) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C SOLD z Fast Intrinsic Rectifier M Mounting Torque 1.13/10 Nm/lb.in. d z Avalanche Rated Weight TO-247 6 g z Low R and Q DS(ON) G TO-264 10 g z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J z Easy to Mount BV V = 0V, I = 250A 100 V DSS GS D z Space Savings V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS z T = 150C 500 A Switch-Mode and Resonant-Mode J Power Supplies R V = 10V, I = 0.5 I , Note 1 9 m DS(on) GS D D25 z DC-DC Converters V = 15V, I = 350A 7 m GS D z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls 2010 IXYS CORPORATION, All Rights Reserved DS99380F(01/10)IXFH170N10P IXFK170N10P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 50 72 S fs DS D D25 C 6000 pF iss C V = 0V, V = 25V, f = 1MHz 2340 pF P oss GS DS 1 2 3 C 730 pF rss t 35 ns d(on) Resistive Switching Times t 50 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 90 ns d(off) R = 3.3 (External) G t 33 ns e f Terminals: 1 - Gate 2 - Drain Q 198 nC 3 - Source Tab - Drain g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 39 nC gs GS DS DSS D D25 Dim. Millimeter Inches Min. Max. Min. Max. Q 107 nC gd A 4.7 5.3 .185 .209 R 0.21 C/W A 2.2 2.54 .087 .102 1 thJC A 2.2 2.6 .059 .098 2 R (TO-247) 0.21 C/W thCS b 1.0 1.4 .040 .055 (TO-264) 0.15 C/W b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Symbol Test Conditions Characteristic Values R 4.32 5.49 .170 .216 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J S 6.15 BSC 242 BSC I V = 0V 170 A S GS TO-264 AA ( IXFK) Outline I Repetitive, Pulse Width Limited by T 350 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 150 ns rr I = 25A, -di/dt = 100A/s, F I 8.0 A RM V = 50V, V = 0V R GS Q 0.6 C RM 1 = Gate Back Side 2 = Drain 3 = Source Tab = Drain Dim. Millimeter Inches Note 1. Pulse test, t 300 s, duty cycle, d 2%. Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537