TM TM Polar3 HiperFET V = 600V IXFA22N60P3 DSS I = 22A Power MOSFET IXFP22N60P3 D25 R 390m DS(on) IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3 Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) TO-263 (IXFA) TO-220 (IXFP) G S G G D D (Tab) D S S D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C 22 A S D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 55 A DM C JM G = Gate D = Drain I T = 25 C11 A A C S = Source Tab = Drain E T = 25 C 400 mJ AS C dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J P T = 25 C 500 W D C Features T -55 ... +150 C J Fast Intrinsic Rectifier T 150 C JM Avalanche Rated T -55 ... +150 C stg Low R and Q DS(ON) G Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb Advantages C M Mounting Torque (TO-247, TO-220 & TO-3P) 1.13 / 10 Nm/lb.in d High Power Density Weight TO-263 2.5 g Easy to Mount TO-220 3.0 g Space Savings TO-3P 5.5 g TO-247 6.0 g Applications Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 1mA 600 V Power Supplies DSS GS D DC-DC Converters V V = V , I = 1.5mA 3.0 5.0 V GS(th) DS GS D Laser Drivers AC and DC Motor Drives I V = 30V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 1.25 mA J R V = 10V, I = 0.5 I , Note 1 390 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100321D(6/18)IXFA22N60P3 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 14 24 S fs DS D D25 C 2600 pF iss C V = 0V, V = 25V, f = 1MHz 265 pF oss GS DS C 3.4 pF rss R Gate Input Resistance 2.1 Gi t 28 ns d(on) Resistive Switching Times t 17 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 54 ns d(off) R = 1 (External) G t 19 ns f Q 38 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 10 nC gs GS DS DSS D D25 Q 11 nC gd R 0.25 C/W thJC R (TO-220) 0.50 C/W thCS (TO-247 & TO-3P) 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 22 A S GS I Repetitive, Pulse Width Limited by T 88 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 11A, -di/dt = 100A/ s F I 8.0 A RM V = 100V, V = 0V R GS Q 0.8 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537