TM TM Polar3 HiperFET V = 600V IXFH42N60P3 DSS I = 42A Power MOSFET D25 R 185m DS(on) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier TO-247 S G Symbol Test Conditions Maximum Ratings D Tab S V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS G = Gate D = Drain V Continuous 30 V GSS S = Source Tab = Drain V Transient 40 V GSM I T = 25 C 42 A D25 C I T = 25 C, Pulse Width Limited by T 100 A DM C JM I T = 25 C 21 A A C E T = 25 C 1 J AS C Features dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J International Standard Package P T = 25 C 830 W D C Fast Intrinsic Rectifier Avalanche Rated T -55 ... +150 C J Low R and Q DS(ON) G T 150 C JM Low Package Inductance T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Power Density M Mounting Torque 1.13 / 10 Nm/lb.in d Easy to Mount Weight 6 g Space Savings Applications Switch-Mode and Resonant-Mode Symbol Test Conditions Characteristic Values Power Supplies (T = 25 C Unless Otherwise Specified) Min. Typ. Max. DC-DC Converters J Laser Drivers BV V = 0V, I = 1mA 600 V DSS GS D AC and DC Motor Drives Robotics and Servo Controls V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125 C 1.5 mA J R V = 10V, I = 0.5 I , Note 1 185 m DS(on) GS D D25 DS100296D(1/20) 2020 IXYS CORPORATION, All Rights ReservedIXFH42N60P3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 25 42 S fs DS D D25 C 5150 pF iss C V = 0V, V = 25V, f = 1MHz 500 pF oss GS DS C 2.8 pF rss R Gate Input Resistance 1.0 Gi t 32 ns d(on) Resistive Switching Times t 23 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 1 (External) G t 17 ns f Q 78 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 20 nC gd R 0.15 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 42 A S GS I Repetitive, Pulse Width Limited by T 168 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 250 ns rr I = 21A, -di/dt = 100A/s F I 12.4 A RM V = 100V, V = 0V R GS Q 1.4 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537