TM IXFH 52N30Q HiPerFET V = 300 V DSS IXFK 52N30Q Power MOSFETs I = 52 A D25 IXFT 52N30Q Q-Class R = 60 m DS(on) t 250 ns N-Channel Enhancement Mode rr Avalanche Rated, High dv/dt, Low t rr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C R = 1 M 300 V DGR J GS V Continuous 20 V GS (TAB) V Transient 30 V GSM I T = 25 C, Chip capability 52 A D25 C I T = 25 C, pulse width limited by T 208 A DM C JM I T = 25 C52A AR C TO-268 (D3) ( IXFT) E T = 25 C30mJ AR C E T = 25 C 1.5 J AS C G (TAB) dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S DM DD DSS S T 150 C, R = 2 J G P T = 25 C 360 W D C T -55 ... +150 C J TO-264 AA (IXFK) T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.063 in) from case for 10 s 300 C L G M Mounting torque TO-247 1.13/10 Nm/lb.in. d D TO-264 0.9/6 Nm/lb.in. S D (TAB) Weight TO-247 6 g G = Gate TO-264 10 g S = Source TAB = Drain TO-268 4 g Features Low gate charge Symbol Test Conditions Characteristic Values International standard packages (T = 25 C, unless otherwise specified) Epoxy meet UL 94 V-0, flammability J min. typ. max. classification TM Low R HDMOS process DS (on) V V = 0 V, I = 1 mA 300 V DSS GS D Rugged polysilicon gate cell structure V V = V , I = 4 mA 2 4 V Avalanche energy and current rated GS(th) DS GS D Fast intrinsic Rectifier I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V T = 25 C50 A Advantages DSS DS DSS J V = 0 V T = 125 C1mA GS J Easy to mount R V = 10 V, I = 0.5 I 60 m DS(on) GS D D25 Space savings Pulse test, t 300 s, duty cycle d 2 % High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98522B (7/00) 2000 IXYS All rights reserved 1 - 2IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 22 35 S fs DS D D25 C 5300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1010 pF oss GS DS C 200 pF rss Dim. Millimeter Inches t 27 ns d(on) Min. Max. Min. Max. t V = 10 V, V = 0.5 V , I = 0.5 I 60 ns A 19.81 20.32 0.780 0.800 r GS DS DSS D D25 B 20.80 21.46 0.819 0.845 t R = 1.5 (External), 80 ns d(off) G C 15.75 16.26 0.610 0.640 t 25 ns D 3.55 3.65 0.140 0.144 f E 4.32 5.49 0.170 0.216 Q 150 nC F 5.4 6.2 0.212 0.244 g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 34 nC G 1.65 2.13 0.065 0.084 gs GS DS DSS D D25 H - 4.5 - 0.177 Q 75 nC gd J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 R 0.35 K/W thJC L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 R TO-247 0.25 K/W thCK TO-264 0.15 K/W TO-264 AA Outline Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 52 A S GS I Repetitive pulse width limited by T 208 A SM JM Dim. Millimeter Inches V I = I , V = 0 V, 1.5 V SD F S GS Min. Max. Min. Max. Pulse test, t 300 s, duty cycle d 2 % A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 t 250 ns A2 2.00 2.10 .079 .083 rr b 1.12 1.42 .044 .056 Q 1 C I = I -di/dt = 100 A/ s, V = 100 V RM F S R b1 2.39 2.69 .094 .106 I 8 A b2 2.90 3.09 .114 .122 RM c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 3 TO-268AA (D PAK) Dim. Millimeter Inches L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Min. Max. Min. Max. P 3.17 3.66 .125 .144 A 4.9 5.1 .193 .201 Q 6.07 6.27 .239 .247 A 2.7 2.9 .106 .114 1 Q1 8.38 8.69 .330 .342 A .02 .25 .001 .010 2 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 S 6.04 6.30 .238 .248 2 C .4 .65 .016 .026 T 1.57 1.83 .062 .072 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 Min. Recommended Footprint E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025