Preliminary Technical Information TM HiperFET V = 300V IXFT70N30Q3 DSS Power MOSFET I = 70A IXFH70N30Q3 D25 Q3-Class R 54m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 300 V DSS J TO-247 (IXFH) V T = 25 C to 150 C, R = 1M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 70 A D25 C G I T = 25 C, Pulse Width Limited by T 210 A D D (Tab) DM C JM S I T = 25 C70 A A C E T = 25 C 1.5 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 830 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low Package Inductance SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Low R and Q DS(on) G Weight TO-268 4.0 g TO-247 6.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 300 V DSS GS D Applications V V = V , I = 4mA 3.0 6.0 V GS(th) DS GS D DC-DC Converters I V = 20V, V = 0V 100 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 10 A DSS DS DSS GS Power Supplies T = 125C 500 A J DC Choppers Temperature and Lighting Controls R V = 10V, I = 0.5 I , Note 1 54 m DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS100380A(1/17) IXFT70N30Q3 IXFH70N30Q3 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 23 38 S fs DS D D25 C 4735 pF iss C V = 0V, V = 25V, f = 1MHz 880 pF oss GS DS C 90 pF rss R Gate Input Resistance 0.12 Gi t 33 ns d(on) Resistive Switching Times t 14 ns r Terminals: 1 - Gate 2,4 - Drain V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 3 - Source t 38 ns d(off) R = 3 (External) G t 9 ns f Q 98 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 34 nC gs GS DS DSS D D25 Q 47 nC gd R 0.15 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 70 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T 280 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS P t 250 ns 1 2 3 rr I = 35A, -di/dt = 100A/ s F I 13.6 A RM V = 100V, V = 0V R GS Q 1.2 C RM e Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 PRELIMINARY TECHNICAL INFORMATION 1 b 2.87 3.12 .113 .123 2 The product presented herein is under development. The Technical Specifications offered are C .4 .8 .016 .031 derived from a subjective evaluation of the design, based upon prior knowledge and experi- D 20.80 21.46 .819 .845 ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right E 15.75 16.26 .610 .640 to change limits, test conditions, and dimensions without notice. e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537