X2-Class V = 650V IXFH80N65X2-4 DSS TM HiPerFET I = 80A D25 Power MOSFET R 38m DS(on) D N-Channel Enhancement Mode G Avalanche Rated TO-247-4L Fast Intrinsic Diode Ss S D S Ss Symbol Test Conditions Maximum Ratings G ( D )Tab V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS S = Source G = Gate V Continuous 30 V GSS D = Drain Ss = Source Sense V Transient 40 V GSM I T = 25 C 80 A D25 C I T = 25 C, Pulse Width Limited by T 160 A DM C JM I T = 25 C 20 A A C Features E T = 25 C 3 J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J International Standard Package P T = 25 C 890 W Low R and Q D C DS(ON) G Avalanche Rated T -55 ... +150 C J Low Package Inductance T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Power Density M Mounting Torque 1.13 / 10 Nm/lb.in d Easy to Mount Weight 6 g Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode Power Supplies BV V = 0V, I = 1mA 650 V DSS GS D DC-DC Converters PFC Circuits V V = V , I = 4mA 3.5 5.0 V GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 50 A DSS DS DSS GS T = 125 C 3 mA J R V = 10V, I = 0.5 I , Note 1 38 m DS(on) GS D D25 DS100748A(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFH80N65X2-4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 33 55 S fs DS D D25 R Gate Input Resistance 0.6 Gi C 8300 pF iss C V = 0V, V = 25V, f = 1MHz 5010 pF oss GS DS C 1.6 pF rss Effective Output Capacitance C 280 pF o(er) Energy related V = 0V GS C 1160 pF V = 0.8 V o(tr) Time related DS DSS t 32 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 3 (External) G t 11 ns f Q 140 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 40 nC gd R 0.14 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 40A, -di/dt = 100A/s F Q 1.7 C RM V = 100V R I 16.7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537