Preliminary Technical Information TM X3-Class HiPerFET V = 250V IXFJ80N25X3 DSS Power MOSFET I = 44A D25 R 18m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode TM ISO TO-247 Avalanche Rated G D Isolated Tab Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 250 V DSS J G = Gate D = Drain V T = 25 C to 150 C, R = 1M 250 V DGR J GS S = Source V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C44A D25 C I T = 25 C, Pulse Width Limited by T 220 A DM C JM Features I T = 25 C40A A C E T = 25 C 1.2 J Silicon Chip on Direct-Copper Bond AS C (DCB) Substrate dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Isolated Mounting Surface P T = 25 C 104 W D C 2500V~ Electrical Isolation Avalanche Rated T -55 ... +150 C J Low R and Q DS(ON) G T 150 C JM Low Package Inductance T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T Plastic Body for 10s 260 C SOLD F Mounting Torque 1.13 / 10 Nm/lb.in C High Power Density Easy to Mount V 50/60 Hz, RM, t = 1min 2500 V~ ISOL Space Savings Weight 5 g Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode Power Supplies BV V = 0V, I = 250A 250 V DSS GS D DC-DC Converters V V = V , I = 1.5mA 2.5 4.5 V Laser Drivers GS(th) DS GS D AC and DC Motor Drives I V = 20V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 5 A DSS DS DSS GS T = 125 C 350 A J R V = 10V, I = 40A, Note 1 18 m DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS100773D(12/17)IXFJ80N25X3 Symbol Test Conditions Characteristic Values ISO TO-247 (IXFJ) OUTLINE (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 40A, Note 1 38 64 S fs DS D R Gate Input Resistance 1.6 Gi C 5430 pF iss C V = 0V, V = 25V, f = 1MHz 890 pF oss GS DS C 1.6 pF rss Effective Output Capacitance C 320 pF Energy related o(er) V = 0V GS C 1410 pF PINS: V = 0.8 V o(tr) Time related DS DSS 1 = Gate 2 = Drain t 30 ns d(on) 3 = Source Resistive Switching Times t 17 ns 4 = Isolated r V = 10V, V = 0.5 V , I = 40A GS DS DSS D t 65 ns d(off) R = 5 (External) G t 8 ns f Q 83 nC g(on) Q V = 10V, V = 0.5 V , I = 40A 27 nC gs GS DS DSS D Q 24 nC gd R 1.20 C/W thJC R 0.30 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 80 A S GS I Repetitive, pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 120 ns rr I = 40A, -di/dt = 100A/ s F Q 600 nC RM V = 100V R I 10 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS re- serves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537