IXFN90N170SK

IXFN90N170SK preliminary I = 90 A D25 SiC Power MOSFET V = 1700 V DSS R = 35 m DS(on) max Kelvin Source gate connection KS Part number G IXFN90N170SK S D D (3) Backside: isolated UL pending G (2) KS (1) S (4) Features / Advantages: Applications: Package: SOT-227B (minibloc) High speed switching Solar inverters Isolation Voltage: 3000 V~ with low capacitances High voltage DC/DC converters Industry standard outline High blocking voltage with low R Motor drives DS(on) RoHS compliant Easy to parallel and simple to drive Switch mode power supplies Epoxy meets UL 94V-0 Resistant to latch-up UPS Base plate with Aluminium nitride Real Kelvin source connection Battery chargers isolation Induction heating Advanced power cycling Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. 20180716a 2018 IXYS All rights reserved 1 - 7IXFN90N170SK preliminary MOSFET Ratings Symbol Definitions Conditions min. typ. max. V drain source breakdown voltage I = 200 A T = 25C 1700 V (BR)DSS D VJ V max transient gate source voltage -10 +25 V GS(max) continous gate source voltage V recommended operational value -5 +20 V GS drain current I T = 25C 90 A D25 C I V = 20 V T = 80C 67 A D80 GS C I T = 100C 56 A D100 C static drain source on resistance R I = 100 A V = 20 V T = 25C 23 35 m DSon D GS VJ T = 150C 45 m VJ V gate threshold voltage I = 36 mA V = V T = 25C 2.0 2.4 4.0 V GS(th) D GS DS VJ T = 150C 1.8 V VJ drain source leakage current I V = 1700 V V = 0 V T = 25C 5 200 A DSS DS GS VJ gate source leakage current I V = 0 V V = 20 V T = 25C 1.2 A GSS DS GS VJ internal gate resistance R f = 1 MHz, V = 25 mV, ESR of C 1.9 G AC ISS input capacitance C 7340 pF iss output capacitance C V = 1000 V V = 0 V f = 1 MHz T = 25C 342 pF oss DS GS VJ C reverse transfer (Miller) capacitance 13.5 pF rss total gate charge Q 376 nC g V = 1200 V I = 100A V = -5/20 V DS D GS gate source charge Q 88 nC gs T = 25C VJ gate drain (Miller) charge Q 114 nC gd turn-on delay time t 34 ns d(on) current rise time t Inductive switching 13 ns r t turn-off delay time V = 1200 V I = 70 A T = 25C 75 ns d(off) DS D VJ current fall time t V = -5 / 20 V R = 2.5 (external) 27 ns f GS G turn-on energy per pulse E Free wheeling diode: 2.58 mJ on turn-off energy per pulse E Body diode V = -5 V 0.77 mJ off GS reverse recovery losses at turn-off E 0.66 mJ rec(off) t turn-on delay time 36 ns d(on) t current rise time Inductive switching 13 ns r turn-off delay time t V = 1200 V I = 70 A T = 150C 105 ns d(off) DS D VJ current fall time t V = -5 / 20 V R = 2.5 (external) 33 ns f GS G turn-on energy per pulse E Free wheeling diode: 4.90 mJ on E turn-off energy per pulse Body diode V = -5 V 1.05 mJ off GS E reverse recovery losses at turn-off 1.89 mJ rec(off) thermal resistance junction to case R 0.22 K/W thJC thermal resistance junction to heatsink R with heatsink compound IXYS test setup 0.30 K/W thJH Source-Drain Diode Ratings Symbol Definitions Conditions min. typ. max. forward voltage drop V I = 70 A V = -5 V T = 25C 4.3 V SD F GS VJ T = 150C 3.8 V VJ t reverse recovery time 24 ns rr V = -5 V I = 70 A V = 1200 V T = 25C GS F R VJ Q reverse recovery charge (intrinsic diode) 1.4 C RM Mosfet gate drive: I max. reverse recovery current 92 A RM V = -5 / 20 V R = 2.5 GS G current slew rate dI /dt 7300 A/s F reverse recovery time t 38 ns rr V = -5 V I = 70 A V = 1200 V T = 150C GS F R VJ reverse recovery charge (intrinsic diode) Q 3.9 C RM Mosfet gate drive: I max. reverse recovery current 170 A RM V = -5 / 20 V R = 2.5 GS G dI /dt current slew rate 6350 A/s F Note: When using SiC Body Diode the maximum recommended V = -5V GS IXYS reserves the right to change limits, test conditions and dimensions. 20180716a 2018 IXYS All rights reserved 2 - 7