TM IXFA 3N120 V =1200 V HiPerFET DSS IXFP 3N120 I =3A Power MOSFETs D25 R = 4.5 DS(on) t 300 ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25C to 150C 1200 V DSS J V T = 25C to 150C R = 1 M 1200 V DGR J GS D (TAB) V Continuous 20 V GS G D V Transient 30 V S GSM I T = 25C3A D25 C I T = 25C, pulse width limited by T 12 A TO-263 (IXFA) DM C JM I T = 25C3A AR C E T = 25C 20 mJ AR C G E 700 mJ D (TAB) AS S dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4.7 J G G = Gate D = Drain P T = 25C 200 W S = Source TAB = Drain D C T -55 to +150 C J T 150 C JM T -55 to +150 C stg Features T 1.6 mm (0.063 in) from case for 10 s 300 C L z M Mounting torque (TO-220) 1.13/10 Nm/lb.in. Low gate charge and capacitances d - easier to drive Weight TO-220 4 g - faster switching TO-263 2 g z International standard packages z Low R DS (on) z Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values z Molding epoxies meet UL 94 V-0 (T = 25C, unless otherwise specified) J flammability classification min. typ. max. V V = 0 V, I = 1 mA 1200 V DSS GS D Advantages V V = V , I = 1.5 mA 2.5 5.0 V GS(th) DS GS D z I V = 20 V , V = 0 100 nA Easy to mount GSS GS DC DS z Space savings I V = V T = 25C50 A DSS DS DSS J z High power density V = 0 V T = 125C2mA GS J R V = 10 V, I = 0.5 I 4.5 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % 2004 IXYS All rights reserved DS99036B(07/04)IXFA 3N120 IXFP 3N120 TO-220 (IXFP) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = 20 V I = 0.5 I , pulse test 1.5 2.5 S fs DS D D25 C 1050 pF iss C V = 0 V, V = 25 V, f = 1 MHz 100 pF oss GS DS C 25 pF rss t 17 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 15 ns r GS DS DSS D D25 t R = 4.7 (External), 32 ns d(off) G t 18 ns f Pins: 1 - Gate 2 - Drain Q 39 nC g(on) 3 - Source 4 - Drain Bottom Side Q V = 10 V, V = 0.5 V , I = 0.5 I 9nC gs GS DS DSS D D25 Q 22 nC gd R 0.62 K/W thJC R (TO-220) 0.25 K/W thCK Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 3 A S GS I Repetitive pulse width limited by T 12 A SM JM TO-263 (IXFA) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t 300 ns rr Q I = I , -di/dt = 100 A/s, V = 100 V 0.4 C RM F S R I 1.2 A RM 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463