IXFP3N120 IXYS

IXFP3N120 electronic component of IXYS
IXFP3N120 IXYS
IXFP3N120 MOSFETs
IXFP3N120  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFP3N120 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFP3N120 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFP3N120
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 3 Amps 1200V 4.50 Rds
Datasheet: IXFP3N120 Datasheet (PDF)
Price (USD)
1: USD 9.024 ea
Line Total: USD 9.02 
Availability - 211
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 9.024
10$ 5.412
100$ 4.972
500$ 4.763

Availability 211
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.024
10$ 5.412
100$ 4.972
500$ 4.763

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFP3N120 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFP3N120 and other electronic components in the MOSFETs category and beyond.

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TM IXFA 3N120 V =1200 V HiPerFET DSS IXFP 3N120 I =3A Power MOSFETs D25 R = 4.5 DS(on) t 300 ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25C to 150C 1200 V DSS J V T = 25C to 150C R = 1 M 1200 V DGR J GS D (TAB) V Continuous 20 V GS G D V Transient 30 V S GSM I T = 25C3A D25 C I T = 25C, pulse width limited by T 12 A TO-263 (IXFA) DM C JM I T = 25C3A AR C E T = 25C 20 mJ AR C G E 700 mJ D (TAB) AS S dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4.7 J G G = Gate D = Drain P T = 25C 200 W S = Source TAB = Drain D C T -55 to +150 C J T 150 C JM T -55 to +150 C stg Features T 1.6 mm (0.063 in) from case for 10 s 300 C L z M Mounting torque (TO-220) 1.13/10 Nm/lb.in. Low gate charge and capacitances d - easier to drive Weight TO-220 4 g - faster switching TO-263 2 g z International standard packages z Low R DS (on) z Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values z Molding epoxies meet UL 94 V-0 (T = 25C, unless otherwise specified) J flammability classification min. typ. max. V V = 0 V, I = 1 mA 1200 V DSS GS D Advantages V V = V , I = 1.5 mA 2.5 5.0 V GS(th) DS GS D z I V = 20 V , V = 0 100 nA Easy to mount GSS GS DC DS z Space savings I V = V T = 25C50 A DSS DS DSS J z High power density V = 0 V T = 125C2mA GS J R V = 10 V, I = 0.5 I 4.5 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % 2004 IXYS All rights reserved DS99036B(07/04)IXFA 3N120 IXFP 3N120 TO-220 (IXFP) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = 20 V I = 0.5 I , pulse test 1.5 2.5 S fs DS D D25 C 1050 pF iss C V = 0 V, V = 25 V, f = 1 MHz 100 pF oss GS DS C 25 pF rss t 17 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 15 ns r GS DS DSS D D25 t R = 4.7 (External), 32 ns d(off) G t 18 ns f Pins: 1 - Gate 2 - Drain Q 39 nC g(on) 3 - Source 4 - Drain Bottom Side Q V = 10 V, V = 0.5 V , I = 0.5 I 9nC gs GS DS DSS D D25 Q 22 nC gd R 0.62 K/W thJC R (TO-220) 0.25 K/W thCK Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 3 A S GS I Repetitive pulse width limited by T 12 A SM JM TO-263 (IXFA) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t 300 ns rr Q I = I , -di/dt = 100 A/s, V = 100 V 0.4 C RM F S R I 1.2 A RM 1. Gate 2. Drain 3. Source 4. Drain Bottom Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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