Preliminary Technical Information TM X3-Class HiPerFET V = 200V IXFT140N20X3HV DSS Power MOSFET I = 140A IXFQ140N20X3 D25 R 9.6m DS(on) IXFH140N20X3 N-Channel Enhancement Mode TO-268HV (IXFT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-3P (IXFQ) V T = 25 C to 150 C 200 V DSS J V T = 25 C to 150 C, R = 1M 200 V DGR J GS V Continuous 20 V GSS G D V Transient 30 V GSM S I T = 25 C 140 A D (Tab) D25 C I T = 25 C, Pulse Width Limited by T 250 A DM C JM TO-247 (IXFH) I T = 25 C70A A C E T = 25 C 1.7 J AS C dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25 C 480 W D C G D S T -55 ... +150 C D (Tab) J T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in d Weight TO-268HV 4.0 g International Standard Packages TO-3P 5.5 g Low R and Q TO-247 6.0 g DS(ON) G Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 1mA 200 V Easy to Mount DSS GS D Space Savings V V = V , I = 4mA 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 10 A DSS DS DSS GS Switch-Mode and Resonant-Mode T = 125C 500 A J Power Supplies DC-DC Converters R V = 10V, I = 0.5 I , Note 1 8.0 9.6 m DS(on) GS D D25 PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 2017 IXYS CORPORATION, All Rights Reserved. DS100843C(11/17) IXFT140N20X3HV IXFQ140N20X3 IXFH140N20X3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 55 94 S fs DS D R Gate Input Resistance 1.6 Gi C 7660 pF iss C V = 0V, V = 25V, f = 1MHz 1290 pF oss GS DS C 4.6 pF rss Effective Output Capacitance C 630 pF o(er) Energy related V = 0V GS C 2000 pF V = 0.8 V o(tr) Time related DS DSS t 28 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 130 ns d(off) R = 5 (External) G t 12 ns f Q 127 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 39 nC gs GS DS DSS D D25 Q 32 nC gd R 0.26 C/W thJC R TO-247& TO-3P 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 140 A S GS I Repetitive, pulse Width Limited by T 540 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 105 ns rr I = 70A, -di/dt = 100A/ s F Q 420 nC RM V = 100V R I 8 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537