Product Information

IXFQ14N80P

Name: IXFQ14N80P
Brand: IXYS
SKU: IXFQ14N80P_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

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MOSFET 14 Amps 800V 0.72 Rds

Manufacturer: IXYS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.1966 ea
Line Total: USD 4.2

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Thu. 09 May to Mon. 13 May MOQ : 1 Multiples : 1 IXFQ14N80P IXYS	1 : USD 6.176 10 : USD 5.2096 30 : USD 4.9916 120 : USD 4.2104 510 : USD 3.6288 1020 : USD 3.1869 2520 : USD 3.0123 5010 : USD 2.9077

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 IXFQ14N80P IXYS	1 : USD 4.1966 3 : USD 3.6209 5 : USD 2.8847 13 : USD 2.7256

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Additional Infomation About Product

IXFQ14N80P is a power MOSFET produced by IXYS corporation. It is a silicon N-Channel MOSFET designed for low current, high speed switching applications. The part has a total gate charge of 14nC and an avalanche energy of 80mJ. It has a maximum drain-source voltage of 600V and a maximum drain current of 0.1A (100mA). The device is packaged in a TO-220AB signature package and has a typical turn-on delay time of 6ns.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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Manufacturer IXYS IXYS
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 14 A 14 A
Vds - Drain-Source Breakdown Voltage 800 V 800 V
Rds On - Drain-Source Resistance 700 mOhms 700 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 400 W 400 W
Mounting Style Through Hole Through Hole
Package / Case TO - 3P - 3 TO - 3P - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Channel Mode Enhancement Enhancement
Tradename Hiperfet Hiperfet
Configuration Single Single
Length 15.8 mm 15.8 mm
Series Ixfq14n80 Ixfq14n80
Transistor Type 1 N - Channel 1 N - Channel
Width 4.9 mm 4.9 mm
Brand Ixys Ixys
Fall Time 27 ns 27 ns
Product Type Mosfet Mosfet
Rise Time 29 ns 29 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 62 ns 62 ns
Typical Turn-On Delay Time 26 ns 26 ns