Product Information

IXFQ90N20X3

IXFQ90N20X3 electronic component of IXYS

Datasheet
MOSFET DiscMSFT NChUltrJnctn X3Class TO-3P (3)
Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.2458 ea
Line Total: USD 12.25

52 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
52 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 11.895
2 : USD 8.528
6 : USD 8.06

Read More Specifications

     
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RoHS - XON
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Additional Infomation About Product

The IXFQ90N20X3 is a MOSFET Discrete N-Channel Ultra Junction Transistor in the TO-3P (3) package manufactured by IXYS. This device is made to provide high switching speed and low gate charge. It has a maximum drain source voltage of 90V and a maximum drain current of 31A. The continuous drain current is rated at 30A and the maximum power dissipation is 225W. This power transistor is optimized for hard and soft switching applications. It is designed to have a low threshold voltage and low RDS(on) for improved conduction performance. This part is lead-free and RoHS-compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

IXYS may also be referenced as

CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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