TM TM Polar HiPerFET V = 1200V IXFT16N120P DSS I = 16A Power MOSFETs IXFH16N120P D25 R 950m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V TO-247 (IXFH) DSS J V T = 25C to 150C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G I T = 25C 16 A D25 C D D (Tab) S I T = 25C, Pulse Width Limited by T 35 A DM C JM I T = 25C8 A A C G = Gate D = Drain E T = 25C 800 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25C 660 W D C Features T -55 ... +150 C J z International Standard Packages T 150 C JM z Fast Recovery Diode T -55 ... +150 C stg z Avalanche Rated T 1.6mm (0.062in.) from Case for 10s 300 C z L Low Package Inductance T Plastic Body for 10 seconds 260 C sold M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Advantages Weight TO-268 4 g z TO-247 6 g Easy to Mount z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. z J High Voltage Switch-mode and Resonant-Mode Power Supplies BV V = 0V, I = 1mA 1200 V DSS GS D z High Voltage Pulse Power Applications z V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF I V = 30V, V = 0V 200 nA GSS GS DS Generators z I V = V , V = 0V 25 A High Voltage DC-DC converters DSS DS DSS GS z T = 125C 2.5 mA High Voltage DC-AC inverters J R V = 10V, I = 0.5 I , Note 1 950 m DS(on) GS D D25 2012 IXYS CORPORATION, All Rights Reserved DS99896B(10/12) IXFT16N120P IXFH16N120P Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 11 17 S fs DS D D25 C 6900 pF iss C V = 0V, V = 25V, f = 1MHz 390 pF oss GS DS C 48 pF rss R Gate Input Resistance 1.4 Gi t 35 ns d(on) Resistive Switching Times t 28 ns r Terminals: 1 - Gate 2,4 - Drain V = 10V, V = 0.5 V , I = 0.5 I 3 - Source GS DS DSS D D25 t 66 ns d(off) R = 2 (External) t 35 ns G f Q 120 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 37 nC gs GS DS DSS D D25 Q 47 nC gd R 0.19 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 16 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T 64 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS P t 300 ns 1 2 3 rr I = 8A, -di/dt = 100A/s F I 7.5 A RM V = 100V, V = 0V R GS Q 0.75 C RM e Terminals: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t 300s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537