IXFX120N65X2 IXYS

IXFX120N65X2 electronic component of IXYS
IXFX120N65X2 IXYS
IXFX120N65X2 MOSFETs
IXFX120N65X2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXFX120N65X2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFX120N65X2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXFX120N65X2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET MOSFET 650V/120A Ultra Junction X2
Datasheet: IXFX120N65X2 Datasheet (PDF)
Price (USD)
1: USD 24.564 ea
Line Total: USD 24.56 
Availability - 253
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 24.564
10$ 17.545
120$ 17.545

Availability 23
Ship by Wed. 06 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 26.3695
30$ 22.5779
100$ 22.2901


Availability 253
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 24.564
10$ 17.545
120$ 17.545

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFX120N65X2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFX120N65X2 and other electronic components in the MOSFETs category and beyond.

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TM X2-Class HiPerFET V = 650V IXFK120N65X2 DSS Power MOSFET I = 120A IXFX120N65X2 D25 R 24m DS(on) N-Channel Enhancement Mode D Avalanche Rated TO-264 Fast Intrinsic Diode G (IXFK) S G D Tab Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 650 V DSS J PLUS247 V T = 25 C to 150 C, R = 1M 650 V DGR J GS (IXFX) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 120 A D25 C I T = 25 C, Pulse Width Limited by T 240 A G DM C JM D Tab S I T = 25 C 15 A A C E T = 25 C 3.5 J AS C G = Gate D = Drain P T = 25 C 1250 W D C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Low Q T 1.6 mm (0.062in.) from Case for 10s 260 C G SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in Low Package Inductance d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Weight TO-264 10 g Advantages PLUS247 6 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 650 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA PFC Circuits GSS GS DS AC and DC Motor Drives I V = V , V = 0V 50 A DSS DS DSS GS Robotics and Servo Controls T = 125 C 5 mA J R V = 10V, I = 0.5 I , Note 1 24 m DS(on) GS D D25 2020 IXYS CORPORATION, All Rights Reserved DS100685D(1/20)IXFK120N65X2 IXFX120N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 46 76 S fs DS D D25 R Gate Input Resistance 0.74 Gi C 14 nF iss C V = 0V, V = 25V, f = 1MHz 8700 pF oss GS DS C 5.5 pF rss Effective Output Capacitance C 455 pF o(er) Energy related V = 0V GS C 1930 pF V = 0.8 V o(tr) Time related DS DSS t 39 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 82 ns d(off) R = 1 (External) G t 12 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 87 nC gs GS DS DSS D D25 Q 65 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 60A, -di/dt = 100A/ s F Q 2.3 C RM V = 100V, V = 0V R GS I 21.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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