TM X2-Class HiPerFET V = 650V IXFK120N65X2 DSS Power MOSFET I = 120A IXFX120N65X2 D25 R 24m DS(on) N-Channel Enhancement Mode D Avalanche Rated TO-264 Fast Intrinsic Diode G (IXFK) S G D Tab Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 650 V DSS J PLUS247 V T = 25 C to 150 C, R = 1M 650 V DGR J GS (IXFX) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 120 A D25 C I T = 25 C, Pulse Width Limited by T 240 A G DM C JM D Tab S I T = 25 C 15 A A C E T = 25 C 3.5 J AS C G = Gate D = Drain P T = 25 C 1250 W D C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Low Q T 1.6 mm (0.062in.) from Case for 10s 260 C G SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in Low Package Inductance d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Weight TO-264 10 g Advantages PLUS247 6 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 650 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 8mA 3.5 5.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA PFC Circuits GSS GS DS AC and DC Motor Drives I V = V , V = 0V 50 A DSS DS DSS GS Robotics and Servo Controls T = 125 C 5 mA J R V = 10V, I = 0.5 I , Note 1 24 m DS(on) GS D D25 2020 IXYS CORPORATION, All Rights Reserved DS100685D(1/20)IXFK120N65X2 IXFX120N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 46 76 S fs DS D D25 R Gate Input Resistance 0.74 Gi C 14 nF iss C V = 0V, V = 25V, f = 1MHz 8700 pF oss GS DS C 5.5 pF rss Effective Output Capacitance C 455 pF o(er) Energy related V = 0V GS C 1930 pF V = 0.8 V o(tr) Time related DS DSS t 39 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 82 ns d(off) R = 1 (External) G t 12 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 87 nC gs GS DS DSS D D25 Q 65 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 60A, -di/dt = 100A/ s F Q 2.3 C RM V = 100V, V = 0V R GS I 21.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537