Preliminary Technical Information TM GigaMOS V = 300V IXFK160N30T DSS I = 160A Power MOSFET IXFX160N30T D25 R 19m DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C 300 V S DSS J V T = 25 C to 150 C, R = 1M 300 V DGR J GS Tab V Continuous 20 V GSS V Transient 30 V GSM PLUS247 (IXFX) I T = 25 C 160 A D25 C I T = 25 C, Pulse Width Limited by T 440 A DM C JM I T = 25 C80A A C E T = 25 C5J AS C G D dV/dt I I , V V , T 150C 20 V/ns Tab S S DM DD DSS J P T = 25 C 1390 W D C G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Fast Intrinsic Diode Weight TO-264 10 g Avalanche Rated PLUS247 6 g Low R DS(on) Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 3mA 300 V DSS GS D Applications V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters I V = 20V, V = 0V 200 nA GSS GS DS Battery Chargers Switched-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 125C 3 mA J DC Choppers R V = 10V, I = 80A, Note 1 19 m DS(on) GS D AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 2009 IXYS CORPORATION, All rights reserved DS100127A(9/14)IXFK160N30T IXFX160N30T Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 24.5 nF iss C V = 0V, V = 25V, f = 1MHz 1825 pF oss GS DS C 45 pF rss R Gate Input Resistance 1.1 Gi Terminals: 1 - Gate t 34 ns d(on) Resistive Switching Times 2 - Drain 3 - Source t 68 ns r 4 - Drain V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns Dim. Millimeter Inches d(off) R = 1 (External) Min. Max. Min. Max. G t 23 ns A 4.82 5.13 .190 .202 f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 376 nC g(on) b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q V = 10V, V = 0.5 V , I = 0.5 I 140 nC gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 Q 56 nC gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.09C/W thJC e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R 0.15C/W thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Source-Drain Diode R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 Outline I V = 0V 160 A S GS I Repetitive, Pulse Width Limited by T 640 A SM JM V I = 60A, V = 0V, Note 1 1.4 V SD F GS t 200 ns rr I = 80A, -di/dt = 100A/ s F Q 1.09 C RM V = 75V, V = 0V R GS I 13 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 PRELIMINARY TECHNICAL INFORMATION A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 The product presented herein is under development. The Technical Specifications offered are b 1.14 1.40 .045 .055 derived from a subjective evaluation of the design, based upon prior knowledge and experi- b 1.91 2.13 .075 .084 1 ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right b 2.92 3.12 .115 .123 2 to change limits, test conditions, and dimensions without notice. C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537