TM TM Polar3 HiPerFET V = 500V IXFK78N50P3 DSS Power MOSFET I = 78A IXFX78N50P3 D25 R 68m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated TO-264 Fast Intrinsic Diode (IXFK) G D Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 500 V Tab DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V PLUS247 GSS V Transient 40 V (IXFX) GSM I T = 25 C 78 A D25 C I T = 25 C, Pulse Width Limited by T 200 A DM C JM I T = 25 C39A A C G D E T = 25 C 1.5 J AS C Tab S P T = 25 C 1130 W D C G = Gate D = Drain dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C Dynamic dv/dt Rating SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Fast Intrinsic Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Q G Weight TO-264 10 g Low R DS(on) PLUS247 6 g Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 500 V Applications DSS GS D V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters Battery Chargers I V = 30V, V = 0V 200 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies DSS DS DSS GS T = 125C 3 mA Uninterrupted Power Supplies J AC Motor Drives R V = 10V, I = 0.5 I , Note 1 68 m DS(on) GS D D25 High Speed Power Switching Applications 2019 IXYS CORPORATION, All Rights Reserved DS100313B(6/19)IXFK78N50P3 IXFX78N50P3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 40 75 S fs DS D D25 C 9.9 nF iss C V = 0V, V = 25V, f = 1MHz 970 pF oss GS DS C 5.0 pF rss R Gate Input Resistance 1.1 Gi t 30 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 1 (External) G t 7 ns f Q 147 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 38 nC gd R 0.11C/W thJC R 0.15C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 78 A S GS I Repetitive, Pulse Width Limited by T 310 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 39A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V, V = 0V R GS I 13.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537