IXTA140N12T2 IXYS

IXTA140N12T2 electronic component of IXYS
IXTA140N12T2 IXYS
IXTA140N12T2 MOSFETs
IXTA140N12T2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTA140N12T2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTA140N12T2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTA140N12T2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChTrenchGate-Gen2 TO-263D2
Datasheet: IXTA140N12T2 Datasheet (PDF)
Price (USD)
1: USD 6.636 ea
Line Total: USD 6.64 
Availability : 7
  
Ship by Mon. 04 Aug to Wed. 06 Aug
QtyUnit Price
1$ 6.636
3$ 5.964
4$ 5.208
11$ 4.928
50$ 4.732

Availability 7
Ship by Mon. 04 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.636
3$ 5.964
4$ 5.208
11$ 4.928
50$ 4.732

   
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We are delighted to provide the IXTA140N12T2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTA140N12T2 and other electronic components in the MOSFETs category and beyond.

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The IXTA140N12T2 is a MOSFET DiscMSFT NChTrenchGate-Gen2 device manufactured by IXYS. It is a discrete metal-oxide-semiconductor field-effect transistor (MOSFET) packaged in a TO-263D2 package. It is comprised of a single N-Channel enhancement-mode lateral MOSFET that is commonly used as a power switch in industrial and automotive applications requiring excellent switching performance. It is designed to provide reliable, low-power operation with high power and thermal cycling capability. It is a 100V device with a maximum drain current of 140A and a threshold voltage of 1.2V. It has a wide range of features including a low on-resistance, low gate charge, high current carrying capability, high switching levels, and fast switching times. It is designed for use in a wide range of dc-dc converters, power supplies, motor drives, and other high-power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS SEMICONDUCTOR
Littelfuse/IXYS
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