IXTH11P50 IXYS

IXTH11P50 electronic component of IXYS
IXTH11P50 IXYS
IXTH11P50 MOSFETs
IXTH11P50  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IXTH11P50 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH11P50 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IXTH11P50
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET -11 Amps -500V 0.75 Rds
Datasheet: IXTH11P50 Datasheet (PDF)
Price (USD)
1: USD 13.02 ea
Line Total: USD 13.02 
Availability - 264
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 13.02
10$ 7.942
120$ 7.304
510$ 7.007

Availability 264
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 13.02
10$ 7.942
120$ 7.304
510$ 7.007


Availability 286
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 16.142
2$ 12.6
5$ 11.914
30$ 11.886

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXTH11P50 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH11P50 and other electronic components in the MOSFETs category and beyond.

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V = - 500V Power MOSFETs IXTH11P50 DSS I = - 11A IXTT11P50 D25 R 750m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 500 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 11 A D25 C G D D (Tab) I T = 25C, Pulse Width Limited by T - 44 A DM C JM S I T = 25C - 11 A A C E T = 25C1J G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 300 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062in.) from Case for 10s 300 C L Features T Plastic Body for 10 seconds 260 C sold z M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. International Standard Packages d z TM Low R HDMOS Process DS (on) Weight TO-268 4 g z Rugged Polysilicon Gate Cell Structure TO-247 6 g z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = 0V, I = - 250A - 500 V z DSS GS D Easy to Mount BV Temperature Coefficient 0.09 %/K z DSS Space Savings z High Power Density V V = V , I = - 250A - 3.0 - 5.0 V GS(th) DS GS D V Temperature Coefficient - 0.25 %/K GS(th) I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V - 200 A DSS DS DSS GS T = 125C -1 mA J R V = 10V, I = - 5.5A, Note 1 750 m DS(on) GS D R Temperature Coefficient 0.92 %/K DS(on) 2013 IXYS CORPORATION, All Rights Reserved DS94535L(01/13) IXTH11P50 IXTT11P50 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 6 11 S fs DS D D25 C 4600 pF iss P C V = 0V, V = - 25V, f = 1MHz 500 pF 1 2 3 oss GS DS C 187 pF rss t 26 ns d(on) Resistive Switching Times t 32 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) e R = 4.7 (External) G t 34 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 145 nC g(on) Dim. Millimeter Inches Q V = -10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 55 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.42 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS 1.65 2.13 .065 .084 b 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Symbol Test Conditions Characteristic Values S 6.15 BSC 242 BSC (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-268 Outline I V = 0V - 11 A S GS I Repetitive, Pulse Width Limited by T - 44 A SM JM V I = I , V = 0V, Note 1 - 3.0 V SD F S GS I = -11A, -di/dt = -100A/s t 500 ns F rr V = -100V, V = 0V R GS Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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