Preliminary Technical Information X-Class V = 650V IXTP32N65X DSS Power MOSFET I = 32A IXTQ32N65X D25 R 135m DS(on) IXTH32N65X N-Channel Enhancement Mode TO-220AB (IXTP) G D Tab S Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS G V Continuous 30 V GSS D V Transient 40 V GSM S Tab I T = 25 C32A D25 C I T = 25 C, Pulse Width Limited by T 64 A DM C JM TO-247 (IXTH) dv/dt I I , V V , T 150C 30 V/ns S D25 DD DSS J P T = 25 C 500 W D C T -55 ... +150 C J G T 150 C JM D Tab S T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L G = Gate D = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque 1.13 / 10 Nm/lb.in d Weight TO-220 3.0 g Features TO-3P 5.5 g TO-247 6.0 g Low R and Q DS(ON) G Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density Easy to Mount BV V = 0V, I = 250A 650 V DSS GS D Space Savings V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 5 A DSS DS DSS GS Power Supplies T = 125C 50 A J DC-DC Converters PFC Circuits R V = 10V, I = 0.5 I , Note 1 135 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS100585D(6/15) IXTP32N65X IXTQ32N65X IXTH32N65X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 13 22 S fs DS D D25 R Gate Input Resistance 2.6 Gi C 2205 pF iss C V = 0V, V = 25V, f = 1MHz 1600 pF oss GS DS C 30 pF rss Effective Output Capacitance C 111 pF o(er) Energy related V = 0V GS C 349 pF V = 0.8 V o(tr) Time related DS DSS t 23 ns d(on) Resistive Switching Times t 49 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 58 ns d(off) R = 5 (External) G t 28 ns f Q 54 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 29 nC gd R 0.25 C/W thJC R TO-220 0.50 C/W thCS TO-247 & TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 32 A S GS I Repetitive, pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 400 ns rr I = 16A, -di/dt = 100A/ s F Q 6.1 C RM V = 100V R I 31 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537