TM V = 300 V IXTK 102N30P PolarHT DSS I = 102 A D25 Power MOSFET R 33 m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C R = 1 M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25 C 102 A D D25 C (TAB) S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 250 A DM C JM I T = 25C60A G = Gate D = Drain AR C S = Source TAB = Drain E T = 25C60mJ AR C E T = 25 C 2.5 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS Features T 150C, R = 4 J G l International standard package P T = 25 C 700 W D C l Unclamped Inductive Switching (UIS) T -55 ... +150 C J rated T 150 C l JM Low package inductance T -55 ... +150 C stg - easy to drive and to protect T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD Advantages M Mounting torque 1.13/10 Nm/lb.in. d l Easy to mount Weight TO-264 10 g l Space savings l High power density Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 300 V DSS GS D V V = V , I = 500A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 33 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99130E(12/05) 2006 IXYS All rights reserved IXTK 102N30P Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 45 57 S fs DS D D25 C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 230 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 28 ns r GS DS DSS D t R = 3.3 (External) 130 ns d(off) G t 30 ns f Q 224 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 110 nC gd R 0.18 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 102 A S GS I Repetitive 250 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 250 ns rr F Q V = 100 V, V = 0 V 3.3 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2