X2-Class V = 650V IXTY2N65X2 DSS Power MOSFET I = 2A IXTP2N65X2 D25 R 2.3 DS(on) N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 650 V DSS J TO-220 (IXTP) V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C2A D25 C G D I T = 25 C, Pulse Width Limited by T 4A S DM C JM D (Tab) I T = 25 C1A A C E T = 25 C 100 mJ AS C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25 C55W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Q G Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-252 0.35 g TO-220 3.00 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 650 V Applications DSS GS D V V = V , I = 250A 3.0 5.0 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS DC-DC Converters PFC Circuits I V = V , V = 0V 5 A DSS DS DSS GS AC and DC Motor Drives T = 125C 100 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 2.3 DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100654D(6/18) IXTY2N65X2 IXTP2N65X2 Symbol Test Conditions Characteristic Values TO-252 AA Outline A E A (T = 25C, Unless Otherwise Specified) Min. Typ. Max b3 L3 c2 J 4 g V = 10V, I = 0.5 I , Note 1 1.1 1.8 S fs DS D D25 A1 H R Gate Input Resistance 14 L4 Gi 1 2 3 A2 L1 L C 180 pF iss b2 1 - Gate c e L2 e1 e1 e1 e1 e1 e1 2,4 - Drain C V = 0V, V = 25V, f = 1MHz 129 pF oss GS DS 0 3 - Source 5.55MIN OPTIONAL C 0.7 pF rss 6.50MIN Effective Output Capacitance 4 C 22 pF 6.40 o(er) Energy related V = 0V GS C 45 pF 2.85MIN V = 0.8 V o(tr) Time related DS DSS BOTTOM 2.28 1.25MIN VIEW LAND PATTERN RECOMMENDATION t 15 ns d(on) Resistive Switching Times t 19 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 20 ns d(off) R = 50 (External) G t 14 ns f Q 4.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 0.8 nC gs GS DS DSS D D25 Q 2.1 nC gd R 2.27 C/W thJC R TO-220 0.50 C/W thCS TO-220 Outline Source-Drain Diode E A oP A1 Symbol Test Conditions Characteristic Values H1 Q (T = 25C, Unless Otherwise Specified) Min. Typ. Max J D D2 D1 I V = 0V 2 A S GS E1 I Repetitive, pulse Width Limited by T 8 A A2 SM JM EJECTOR PIN L1 L V I = I , V = 0V, Note 1 1.4 V SD F S GS 137 ns t e c 3X b rr e I = 1A, -di/dt = 100A/ s F e1e1 3X b2 Q 508 nC RM 1 - Gate V = 100V R I 7.4 A 2,4 - Drain RM 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537