V = 1000V Depletion Mode IXTA3N100D2 DSX I > 3A MOSFET IXTP3N100D2 D(on) R 6 DS(on) D N-Channel G TO-263 AA (IXTA) S G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1000 V DSX J D (Tab) V Continuous 20 V GSX V Transient 30 V TO-220AB (IXTP) GSM P T = 25 C 125 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg G D D (Tab) S T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d S = Source Tab = Drain Weight TO-263 2.5 g TO-220 3.0 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings High Power Density BV V = - 5V, I = 250A 1000 V DSX GS D V V = 25V, I = 250 A - 2.5 - 4.5 V GS(off) DS D Applications I V = 20V, V = 0V 100 nA GSX GS DS I V = V , V = - 5V 5 A Audio Amplifiers DSX(off) DS DSX GS Start-Up Circuits T = 125C 50A J Protection Circuits R V = 0V, I = 1.5A, Note 1 6 DS(on) GS D Ramp Generators Current Regulators I V = 0V, V = 50V, Note 1 3 A D(on) GS DS Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100184E(4/17)IXTA3N100D2 IXTP3N100D2 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 1.5A, Note 1 1.2 2.0 S fs DS D C 1020 pF iss C V = -10V, V = 25V, f = 1MHz 68 pF oss GS DS C 17 pF rss t 27 ns d(on) Resistive Switching Times 1. Gate 2. Drain t 67 ns r 3. Source V = 5V, V = 500V, I = 1.5A GS DS D 4. Drain t 34 ns d(off) Bottom R = 3.3 (External) Side G t 40 ns f Q 37.5 nC g(on) Dim. Millimeter Inches Q V = 5V, V = 500V, I = 1.5A 4.4 nC gs GS DS D Min. Max. Min. Max. A 4.06 4.83 .160 .190 Q 21.2 nC gd b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 R 1.0 C/W c 0.40 0.74 .016 .029 thJC c2 1.14 1.40 .045 .055 R TO-220 0.50 C/W thCS D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC Safe-Operating-Area Specification L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 Characteristic Values L2 1.02 1.40 .040 .055 Symbol Test Conditions Min. Typ. Max. L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 SOA V = 800V, I = 94mA, T = 75 C, Tp = 5s 75 W DS D C TO-220 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 3A, V = -10V, Note 1 0.8 1.3 V SD F GS t 970 ns rr I = 3A, -di/dt = 100A/ s F I 12.7 A RM V = 100V, V = -10V R GS Q 6.16 C RM Pins: 1 - Gate 2 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537