TM TrenchP V = - 100V IXTT76P10THV DSS I = - 76A Power MOSFET IXTA76P10T D25 R 25m DS(on) IXTP76P10T IXTH76P10T TO-268HV P-Channel Enhancement Mode (IXTT) Avalanche Rated G D S D (Tab) G TO-263 AA (IXTA) S G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB V T = 25 C to 150 C - 100 V DSS J (IXTP) V T = 25 C to 150 C, R = 1M - 100 V DGR J GS V Continuous 15 V GSS G V Transient 25 V GSM D D (Tab) S I T = 25 C - 76 A D25 C TO-247 I T = 25 C, Pulse Width Limited by T - 230 A (IXTH) DM C JM I T = 25 C - 38 A A C E T = 25 C1J AS C G D P T = 25 C 298 W S D (Tab) D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in. d Avalanche Rated Weight TO-263 2.5 g Extended FBSOA TO-220 3.0 g Fast Intrinsic Diode TO-268HV 4.0 g TO-247 6.0 g Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = - 250A -100 V DSS GS D Applications V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D High-Side Switching I V = 15V, V = 0V 100 nA GSS GS DS Push Pull Amplifiers I V = V , V = 0V - 15 A DC Choppers DSS DS DSS GS T = 125C - 750A Automatic Test Equipment J Current Regulators R V = -10V, I = 0.5 I , Note 1 25 m DS(on) GS D D25 Battery Charger Applications 2017 IXYS CORPORATION, All Rights Reserved DS100024C(9/15) IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 35 58 S fs DS D D25 C 13.7 nF iss C V = 0V, V = - 25V, f = 1MHz 890 pF oss GS DS C 275 pF rss t 25 ns d(on) Resistive Switching Times t 40 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 52 ns d(off) R = 1 (External) G t 20 ns f Q 197 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 65 nC gs GS DS DSS D D25 Q 65 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 76 A S GS I Repetitive, Pulse Width Limited by T - 304 A SM JM V I = - 38A, V = 0V, Note 1 -1.3 V SD F GS t 70 ns rr I = - 38A, -di/dt = -100A/ s F Q 215 nC RM V = - 50V, V = 0V R GS I - 6 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537