TM PolarP V = - 200V IXTR90P20P DSS I = - 53A Power MOSFET D25 R 48m DS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C - 200 V DSS J V T = 25 C to 150 C, R = 1M - 200 V DGR J GS G D Isolated Tab V Continuous 20 V GSS S V Transient 30 V GSM I T = 25 C - 53 A G = Gate D = Drain D25 C S = Source I T = 25 C, Pulse Width Limited by T - 270 A DM C JM I T = 25 C - 90 A A C E T = 25 C 3.5 J AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J Features P T = 25 C 312 W D C Silicon chip on Direct-Copper Bond T -55 ... +150 C J (DCB) Substrate T 150 C JM - UL Recognized Package T -55 ... +150 C stg - Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C - 2500V~ Electrical Isolation L T 1.6 mm (0.062in.) from Case for 10s 260 C Avalanche Rated SOLD Fast Intrinsic Diode V 50/60 H , RMS t = 1min 2500 V~ ISOL Z TM The Rugged PolarP Process M Mounting Force 20..120/4.5..27 N/lb d Low Q G Weight 6 g Low Drain-to-Tab Capacitance Low Package Inductance Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = - 250A - 200 V DSS GS D V V = V , I = -1mA - 2.0 - 4.5 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS High-Side Switches Push Pull Amplifiers I V = V , V = 0V - 50 A DSS DS DSS GS DC Choppers T = 125C - 250 A J Automatic Test Equipment R V = -10V, I = - 45A, Note 1 48 m DS(on) GS D Current Regulators 2016 IXYS CORPORATION, All Rights Reserved DS99932D(6/16) IXTR90P20P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXTR) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 45A, Note 1 30 51 S fs DS D C 12 nF iss C V = 0V, V = - 25V, f = 1MHz 2210 pF oss GS DS C 250 pF rss t 32 ns d(on) Resistive Switching Times t 60 ns r V = -10V, V = 0.5 V , I = - 45A GS DS DSS D t 89 ns d(off) R = 1 (External) G t 28 ns f 1 = Gate Q 205 nC 2,4 = Drain g(on) 3 = Source Q V = -10V, V = 0.5 V , I = - 45A 45 nC gs GS DS DSS D Q 80 nC gd R 0.40 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 90 A S GS I Repetitive, Pulse Width Limited by T - 360 A SM JM V I = - 45A, V = 0V, Note 1 - 3.2 V SD F GS t 315 ns rr I = - 45A, -di/dt = -150A/ s F Q 6.6 C RM V = -100V, V = 0V R GS I - 42 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537