V = - 500V Power MOSFETs IXTH11P50 DSS I = - 11A IXTT11P50 D25 R 750m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 500 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 11 A D25 C G D D (Tab) I T = 25C, Pulse Width Limited by T - 44 A DM C JM S I T = 25C - 11 A A C E T = 25C1J G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 300 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062in.) from Case for 10s 300 C L Features T Plastic Body for 10 seconds 260 C sold z M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. International Standard Packages d z TM Low R HDMOS Process DS (on) Weight TO-268 4 g z Rugged Polysilicon Gate Cell Structure TO-247 6 g z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = 0V, I = - 250A - 500 V z DSS GS D Easy to Mount BV Temperature Coefficient 0.09 %/K z DSS Space Savings z High Power Density V V = V , I = - 250A - 3.0 - 5.0 V GS(th) DS GS D V Temperature Coefficient - 0.25 %/K GS(th) I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V - 200 A DSS DS DSS GS T = 125C -1 mA J R V = 10V, I = - 5.5A, Note 1 750 m DS(on) GS D R Temperature Coefficient 0.92 %/K DS(on) 2013 IXYS CORPORATION, All Rights Reserved DS94535L(01/13) IXTH11P50 IXTT11P50 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 6 11 S fs DS D D25 C 4600 pF iss P C V = 0V, V = - 25V, f = 1MHz 500 pF 1 2 3 oss GS DS C 187 pF rss t 26 ns d(on) Resistive Switching Times t 32 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) e R = 4.7 (External) G t 34 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 145 nC g(on) Dim. Millimeter Inches Q V = -10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 55 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.42 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS 1.65 2.13 .065 .084 b 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Symbol Test Conditions Characteristic Values S 6.15 BSC 242 BSC (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-268 Outline I V = 0V - 11 A S GS I Repetitive, Pulse Width Limited by T - 44 A SM JM V I = I , V = 0V, Note 1 - 3.0 V SD F S GS I = -11A, -di/dt = -100A/s t 500 ns F rr V = -100V, V = 0V R GS Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537