TM V = 500 V IXTA 5N50P PolarHV DSS I = 4.8 A IXTP 5N50P D25 Power MOSFET R 1.4 DS(on) IXTV 5N50P N-Channel Enhancement Mode IXTY 5N50P Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S V T = 25C to 150C 500 V (TAB) DSS J V T = 25C to 150C R = 1 M 500 V DGR J GS TO-220 (IXTP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 4.8 A D25 C I T = 25C, pulse width limited by T 10 A DM C JM (TAB) G I T = 25C5A D AR C S E T = 25C20mJ AR C E T = 25C 250 mJ AS C TO-252 (IXTU) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS TO-252 (IXTY) T 150C, R = 30 J G P T = 25C89W D C G T -55 ... +150 C S J T 150 C (TAB) JM T -55 ... +150 C stg G = Gate D = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 C S = Source TAB = Drain L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d Weight TO-220 4 g TO-263 3 g Features TO-252 0.8 g l International standard packages l Unclamped Inductive Switching (UIS) Symbol Test Conditions Characteristic Values rated l (T = 25C, unless otherwise specified) Min. Typ. Max. Low package inductance J - easy to drive and to protect BV V = 0 V, I = 250 A 500 V DSS GS D V V = V , I = 50 A 3.0 5.5 V GS(th) DS GS D Advantages I V = 30 V, V = 0 V 100 nA GSS GS DS l Easy to mount I V = V 5 A l DSS DS DSS Space savings V = 0 V T = 125C50 A l GS J High power density R V = 10 V, I = 0.5 I 1.4 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99446E(04/06) 2006 IXYS All rights reservedIXTA 5N50P IXTP 5N50P IXTY 5N50P TO-263 (IXTA) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 3.0 4.7 S fs DS D D25 C 620 pF iss C V = 0 V, V = 25 V, f = 1 MHz 72 pF oss GS DS C 6.3 pF rss t 22 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 26 ns r GS DS DSS D D25 t R = 30 (External) 65 ns d(off) G t 24 ns f Q 12.6 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 4.3 nC gs GS DS DSS D D25 Q 5.0 nC gd R 1.4C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 5 A TO-220 (IXTP) Outline S GS I Repetitive 15 A SM V I = I , V = 0 V, Pulse test 1.5 V SD F S GS t I = 5 A, -di/dt = 100 A/s, 400 ns rr F V = 100 V, V = 0 V R GS Note 1: Pulse test, t 300 s, duty cycle d 2 % TO-252 (IXTY) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 Pins: 1 - Gate 2 - Drain A1 0.89 1.14 0.035 0.045 3 - Source 4 - Drain A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 Pins: 1 - Gate 2,4 - Drain L3 2.54 2.92 0.100 0.115 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2