Product Information

4N65F

4N65F electronic component of Jing Heng

ITO-220 MOSFETs ROHS

Manufacturer: Jing Heng
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2725 ea
Line Total: USD 0.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

4N65F
Jing Heng

1 : USD 0.2619
10 : USD 0.2092
50 : USD 0.1866
100 : USD 0.1583
500 : USD 0.1458
1000 : USD 0.1382

     
Manufacturer
Product Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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The 4N65F with ITO-220 MOSFETs ROHS manufactured by Jing Heng is a low on-resistance Field Effect Transistor (FET). It is designed for low cost low voltage (< 30 V) applications such as load switch, DC-DC Converter and motor drive. It is RoHS compliant with a maximum drain current of 0.22 A (with an additional 0.4 A surge), a maximum drain-source voltage of 30 V and a gate-source voltage of 25 V. This component has an industry-standard TO-220 package and comes with various options to facilitate mounting and secure soldering. This device also has an integrated gate-bly and feedback diodes which reduce the need for external components.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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